SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Design of high brightness cubic-GaN LEDs grown on GaAs substrate
Sun YP; Shen XM; Zhang ZH; Zhao DG; Feng ZH; Fu Y; Zhang SN; Yang H; Sun YP Chinese Acad Sci State Key Lab Integrated Optoelect Inst Semicond Beijing 100083 Peoples R China.
2003
Conference Name11th Seoul International Symposium on the Physics of Semiconductors and Applications
Source PublicationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, 42
PagesS753-S756
Conference DateAUG 20-23, 2002
Conference PlaceSEOUL, SOUTH KOREA
Publication Place635-4, YUKSAM-DONG, KANGNAM-KU, SEOUL 135-703, SOUTH KOREA
PublisherKOREAN PHYSICAL SOC
ISSN0374-4884
AbstractThe Principle of optical thin film was used to calculate the feasibility of improving the light extraction efficiency of GaN/GaAs optical devices by wafer-bonding technique. The calculated results show that the light extraction efficiency of bonded samples can be improved by 2.66 times than the as-grown GaN/GaAs samples when a thin Ni layer was used as adhesive layer and Ag layer as reflective layer. Full reflectance spectrum comparison shows that reflectivity for the incident light of 459.2 nm of the bonded samples was improved by 2.4 times than the as-grown samples, which is consistent with the calculated results.
metadata_83chinese acad sci, state key lab integrated optoelect, inst semicond, beijing 100083, peoples r china
KeywordWafer Bunding Cubic Gan Light-emitting-diodes Field-effect Transistor Single-crystal Gan Microwave Performance Mirror Junction
Funding OrganizationAIXTRON AG.; Epichem Inc.; KODENSHI AUK.; LG Electr Inst Technol.; LUXPIA Co Ltd.; Natl Program Tera Level Nanodevices.; Thomas Swan Sci Equipment Ltd.; Kyung Hee Univ, Adv Display Res Ctr.; Sungkyunkwan Univ, Ctr Nanotubes & Nanostruct Composites.; Dongguk Univ, Quantum Funct Semiconductor Res Ctr.; Chonbuk Natl Univ, Semiconductor Phys Res Ctr.
Subject Area光电子学
Indexed ByCPCI-S
Language英语
Document Type会议论文
Identifierhttp://ir.semi.ac.cn/handle/172111/14859
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorSun YP Chinese Acad Sci State Key Lab Integrated Optoelect Inst Semicond Beijing 100083 Peoples R China.
Recommended Citation
GB/T 7714
Sun YP,Shen XM,Zhang ZH,et al. Design of high brightness cubic-GaN LEDs grown on GaAs substrate[C]. 635-4, YUKSAM-DONG, KANGNAM-KU, SEOUL 135-703, SOUTH KOREA:KOREAN PHYSICAL SOC,2003:S753-S756.
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