Design of high brightness cubic-GaN LEDs grown on GaAs substrate
Sun YP; Shen XM; Zhang ZH; Zhao DG; Feng ZH; Fu Y; Zhang SN; Yang H; Sun YP Chinese Acad Sci State Key Lab Integrated Optoelect Inst Semicond Beijing 100083 Peoples R China.
2003
会议名称11th Seoul International Symposium on the Physics of Semiconductors and Applications
会议录名称JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 42
页码S753-S756
会议日期AUG 20-23, 2002
会议地点SEOUL, SOUTH KOREA
出版地635-4, YUKSAM-DONG, KANGNAM-KU, SEOUL 135-703, SOUTH KOREA
出版者KOREAN PHYSICAL SOC
ISSN0374-4884
部门归属chinese acad sci, state key lab integrated optoelect, inst semicond, beijing 100083, peoples r china
摘要The Principle of optical thin film was used to calculate the feasibility of improving the light extraction efficiency of GaN/GaAs optical devices by wafer-bonding technique. The calculated results show that the light extraction efficiency of bonded samples can be improved by 2.66 times than the as-grown GaN/GaAs samples when a thin Ni layer was used as adhesive layer and Ag layer as reflective layer. Full reflectance spectrum comparison shows that reflectivity for the incident light of 459.2 nm of the bonded samples was improved by 2.4 times than the as-grown samples, which is consistent with the calculated results.
关键词Wafer Bunding Cubic Gan Light-emitting-diodes Field-effect Transistor Single-crystal Gan Microwave Performance Mirror Junction
学科领域光电子学
主办者AIXTRON AG.; Epichem Inc.; KODENSHI AUK.; LG Electr Inst Technol.; LUXPIA Co Ltd.; Natl Program Tera Level Nanodevices.; Thomas Swan Sci Equipment Ltd.; Kyung Hee Univ, Adv Display Res Ctr.; Sungkyunkwan Univ, Ctr Nanotubes & Nanostruct Composites.; Dongguk Univ, Quantum Funct Semiconductor Res Ctr.; Chonbuk Natl Univ, Semiconductor Phys Res Ctr.
收录类别CPCI-S
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/14859
专题中国科学院半导体研究所(2009年前)
通讯作者Sun YP Chinese Acad Sci State Key Lab Integrated Optoelect Inst Semicond Beijing 100083 Peoples R China.
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Sun YP,Shen XM,Zhang ZH,et al. Design of high brightness cubic-GaN LEDs grown on GaAs substrate[C]. 635-4, YUKSAM-DONG, KANGNAM-KU, SEOUL 135-703, SOUTH KOREA:KOREAN PHYSICAL SOC,2003:S753-S756.
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