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Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 8, 页码: Article no.83501
Authors:  Zhou XL;  Chen YH;  Zhang HY;  Zhou GY;  Li TF;  Liu JQ;  Ye XL;  Xu B;  Wang ZG;  Zhou, XL, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. zhouxl06@semi.ac.cn
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Inas Islands  Mu-m  Escape  Gaas  Gaas(100)  Substrate  
Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
Authors:  Liu HY;  Xu B;  Ding D;  Chen YH;  Zhang JF;  Wu J;  Wang ZG;  Liu HY Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
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Low Dimensional Structures  Molecular Beam Epitaxy  Nanomaterials  Inas Islands  Gaas  Growth  Gaas(100)  Thickness  Density  
Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 227, 期号: 0, 页码: 1005-1009
Authors:  Liu HY;  Xu B;  Ding D;  Chen YH;  Zhang JF;  Wu J;  Wang ZG;  Liu HY,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Low Dimensional Structures  Molecular Beam Epitaxy  Nanomaterials  Inas Islands  Gaas  Growth  Gaas(100)  Thickness  Density  
InAs self-assembled nanostructures grown on InP(001) 期刊论文
CHINESE PHYSICS, 2000, 卷号: 9, 期号: 3, 页码: 222-224
Authors:  Li YF;  Liu FQ;  Xu B;  Lin F;  Wu J;  Jiang WH;  Ding D;  Wang ZG;  Li YF,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China.
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Molecular-beam Epitaxy  Quantum Dots  Islands  Gaas  Threshold  Gaas(100)  Size  Inp  
Effects of seed layer on the realization of larger self-assembled coherent InAs/GaAs quantum dots 期刊论文
JOURNAL OF APPLIED PHYSICS, 2000, 卷号: 88, 期号: 9, 页码: 5433-5436
Authors:  Liu HY;  Xu B;  Chen YH;  Ding D;  Wang ZG;  Liu HY,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Inas Islands  Growth  Gaas  Relaxation  Evolution  Gaas(100)  Thickness  Density  Size  
Photoluminescence study of InAlAs quantum dots grown on differently oriented surfaces 期刊论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 卷号: 18, 期号: 1, 页码: 21-24
Authors:  Zhou W;  Xu B;  Xu HZ;  Jiang WH;  Liu FQ;  Gong Q;  Ding D;  Liang JB;  Wang ZG;  Zhu ZM;  Li GH;  Zhou W,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Molecular-beam Epitaxy  3-dimensional Island Formation  Monolayer Coverage  Gaas  Inas  Ingaas  Temperature  Inxga1-xas  Ensembles  Gaas(100)  
Annealing effect on the surface morphology and photoluminescence of InGaAs/GaAs quantum dots grown by molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 212, 期号: 1-2, 页码: 356-359
Authors:  Jiang WH;  Xu HZ;  Xu B;  Ye XL;  Wu J;  Ding D;  Liang JB;  Wang ZG;  Jiang WH,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Rapid Thermal Annealing  Ingaas/gaas  Quantum Dots  Molecular Beam Epitaxy  Luminescence  Fabrication  Gaas(100)  Interface  Laser  Layer  
In composition dependence of lateral ordering in InGaAs quantum dots grown on (311)B GaAs substrates 期刊论文
APPLIED SURFACE SCIENCE, 1999, 卷号: 141, 期号: 1-2, 页码: 101-106
Authors:  Xu HZ;  Zhou W;  Xu B;  Jiang WH;  Gong Q;  Ding D;  Wang ZG;  Xu HZ,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China. 电子邮箱地址: hzxu@red.semi.ac.cn
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Quantum Dot Array  Inxga1-xas Self-assembly  Molecular Beam Epitaxy  Gaas (311)b  High-index  Chemical-vapor-deposition  Surface Structure  Self-organization  Molecular-beam Epitaxy  Phase Epitaxy  Inas  Surfaces  Microstructures  Gaas(100)  Alignment  
Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(311)B surfaces 期刊论文
JOURNAL OF CRYSTAL GROWTH, 1999, 卷号: 205, 期号: 4, 页码: 481-488
Authors:  Xu HZ;  Jiang WH;  Xu B;  Zhou W;  Wang ZG;  Xu HZ,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Two-dimensional (2d) Ordering  Quantum Dot Array  Inxga1-xas  Self-assembly  Molecular Beam Epitaxy  Gaas(311)b  Chemical-vapor-deposition  High-index  Organized Growth  Molecular-beam-epitaxy  Inas Islands  Gaas  Gaas(100)  Alignment  Matrix  Arrays  Disks  
Two-dimensional ordering of self-assembled InxGal-xAs quantum dots grown on GaAs(311)B surfaces 期刊论文
JOURNAL OF CRYSTAL GROWTH, 1999, 卷号: 206, 期号: 4, 页码: 279-286
Authors:  Xu HZ;  Jiang WH;  Xu B;  Zhou W;  Wang ZG;  Xu HZ,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(305Kb)  |  Favorite  |  View/Download:815/261  |  Submit date:2010/08/12
Two-dimensional (2d) Ordering  Quantum Dot Array  Inxga1-xas  Self-assembly  Molecular Beam Epitaxy  Gaas(311)b  Chemical-vapor-deposition  High Index  Organized Growth  Molecular-beam-epitaxy  Inas Islands  Gaas  Gaas(100)  Alignment  Matrix  Disks