SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer
Liu HY; Xu B; Ding D; Chen YH; Zhang JF; Wu J; Wang ZG; Liu HY Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
2001
Conference Name11th International Conference on Molecular Beam Epitaxy (MBE-XI)
Source PublicationJOURNAL OF CRYSTAL GROWTH, 227
Pages1005-1009
Conference DateSEP 11-15, 2000
Conference PlaceBEIJING, PEOPLES R CHINA
Publication PlacePO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
PublisherELSEVIER SCIENCE BV
ISSN0022-0248
AbstractThe size and shape Evolution of self-assembled InAs quantum dots (QDs) influenced by 2.0-ML InAs seed layer has been systematically investigated for 2.0, 2.5, and 2.9-ML deposition on GaAs(1 0 0) substrate. Based on comparisons with the evolution of InAs islands on single layer samples at late growth stage, the bimodal size distribution of InAs islands at 2.5-ML InAs coverage and the formation of larger InAs quantum dots at 2.9-ML deposition have been observed on the second InAs layer. The further cross-sectional transmission electron microscopy measurement indicates the larger InAs QDs: at 2.9-ML deposition on the second layer are free of dislocation. In addition, the interpretations for the size and shape evolution of InAs/GaAs QDs on the second layer will be presented. (C) 2001 Elsevier Science B.V. All lights reserved.
metadata_83chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
KeywordLow Dimensional Structures Molecular Beam Epitaxy Nanomaterials Inas Islands Gaas Growth Gaas(100) Thickness Density
Funding OrganizationChina Natl Nat Sci Fdn.; Inst Semiconductor, CAS.; Inst Phys, CAS.; State Key Lab Funct Mat Informat.; Inst Met, CAS.; Hong Kong Univ Sci & Technol.; Univ Hong Kong, Lab New Mat.; Chinese Acad Sci, Lab New Mat.; VG Semicon.; Riber.
Subject Area半导体材料
Indexed ByCPCI-S
Language英语
Document Type会议论文
Identifierhttp://ir.semi.ac.cn/handle/172111/14953
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorLiu HY Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Recommended Citation
GB/T 7714
Liu HY,Xu B,Ding D,et al. Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2001:1005-1009.
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