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Substrate dependence of InGaAs quantum dots grown by molecular beam epitaxy 期刊论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 卷号: 19, 期号: 1, 页码: 197-201
Authors:  Jiang WH;  Xu HZ;  Xu B;  Zhou W;  Gong Q;  Ding D;  Liang JB;  Wang ZG;  Jiang WH,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Oriented Gaas  Inas Islands  High-index  Surfaces  Temperature  Topography  Strain  Laser  
Anomalous temperature dependence of photoluminescence from InAs quantum dots 期刊论文
JOURNAL OF APPLIED PHYSICS, 2000, 卷号: 88, 期号: 5, 页码: 2529-2532
Authors:  Jiang WH;  Ye XL;  Xu B;  Xu HZ;  Ding D;  Liang JB;  Wang ZG;  Jiang WH,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Wells  (In  Ga)as/Gaas  
Structural and photoluminescence properties of In-0.9(Ga/Al)(0.1)As self-assembled quantum dots on InP substrate 期刊论文
JOURNAL OF APPLIED PHYSICS, 2000, 卷号: 88, 期号: 1, 页码: 533-536
Authors:  Sun S;  Wu J;  Liu FQ;  Zu HZ;  Chen YH;  Ye XL;  Jiang WH;  Xu B;  Wang ZG;  Sun S,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Molecular-beam Epitaxy  Inas Islands  Inp(001)  Growth  Gaas  Semiconductors  Thickness  Lasers  Ingaas  Size  
Photoluminescence study of InAlAs quantum dots grown on differently oriented surfaces 期刊论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 卷号: 18, 期号: 1, 页码: 21-24
Authors:  Zhou W;  Xu B;  Xu HZ;  Jiang WH;  Liu FQ;  Gong Q;  Ding D;  Liang JB;  Wang ZG;  Zhu ZM;  Li GH;  Zhou W,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Molecular-beam Epitaxy  3-dimensional Island Formation  Monolayer Coverage  Gaas  Inas  Ingaas  Temperature  Inxga1-xas  Ensembles  Gaas(100)  
Annealing effect on the surface morphology and photoluminescence of InGaAs/GaAs quantum dots grown by molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 212, 期号: 1-2, 页码: 356-359
Authors:  Jiang WH;  Xu HZ;  Xu B;  Ye XL;  Wu J;  Ding D;  Liang JB;  Wang ZG;  Jiang WH,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Rapid Thermal Annealing  Ingaas/gaas  Quantum Dots  Molecular Beam Epitaxy  Luminescence  Fabrication  Gaas(100)  Interface  Laser  Layer  
Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001) 会议论文
JOURNAL OF ELECTRONIC MATERIALS, 28 (5), CHARLOTTESVILLE, VIRGINIA, JUN 24-26, 1998
Authors:  Zhou W;  Xu B;  Xu HZ;  Liu FQ;  Liang JB;  Wang ZG;  Zhu ZZ;  Li GH;  Zhou W Chinese Acad Sci Lab Semicond Mat Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
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Bimodal Distribution  Photoluminescence (Pl)  Quantum-size Effect  Ge  Ensembles  Si(100)  Growth  Shape  
In composition dependence of lateral ordering in InGaAs quantum dots grown on (311)B GaAs substrates 期刊论文
APPLIED SURFACE SCIENCE, 1999, 卷号: 141, 期号: 1-2, 页码: 101-106
Authors:  Xu HZ;  Zhou W;  Xu B;  Jiang WH;  Gong Q;  Ding D;  Wang ZG;  Xu HZ,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China. 电子邮箱地址: hzxu@red.semi.ac.cn
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Quantum Dot Array  Inxga1-xas Self-assembly  Molecular Beam Epitaxy  Gaas (311)b  High-index  Chemical-vapor-deposition  Surface Structure  Self-organization  Molecular-beam Epitaxy  Phase Epitaxy  Inas  Surfaces  Microstructures  Gaas(100)  Alignment  
Fabrication of InGaAs quantum dots with an underlying InGaAlAs layer on GaAs(100) and high index substrates by molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 1999, 卷号: 205, 期号: 4, 页码: 607-612
Authors:  Jiang WH;  Xu HZ;  Xu B;  Wu J;  Ye XL;  Liu HY;  Zhou W;  Sun ZZ;  Li YF;  Liang JB;  Wang ZG;  Jiang WH,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Quantum Dots  Ingaas/ingaalas  Adjusting Layer  Molecular Beam Epitaxy  High Index  Gaas  
Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(311)B surfaces 期刊论文
JOURNAL OF CRYSTAL GROWTH, 1999, 卷号: 205, 期号: 4, 页码: 481-488
Authors:  Xu HZ;  Jiang WH;  Xu B;  Zhou W;  Wang ZG;  Xu HZ,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Two-dimensional (2d) Ordering  Quantum Dot Array  Inxga1-xas  Self-assembly  Molecular Beam Epitaxy  Gaas(311)b  Chemical-vapor-deposition  High-index  Organized Growth  Molecular-beam-epitaxy  Inas Islands  Gaas  Gaas(100)  Alignment  Matrix  Arrays  Disks  
Two-dimensional ordering of self-assembled InxGal-xAs quantum dots grown on GaAs(311)B surfaces 期刊论文
JOURNAL OF CRYSTAL GROWTH, 1999, 卷号: 206, 期号: 4, 页码: 279-286
Authors:  Xu HZ;  Jiang WH;  Xu B;  Zhou W;  Wang ZG;  Xu HZ,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Two-dimensional (2d) Ordering  Quantum Dot Array  Inxga1-xas  Self-assembly  Molecular Beam Epitaxy  Gaas(311)b  Chemical-vapor-deposition  High Index  Organized Growth  Molecular-beam-epitaxy  Inas Islands  Gaas  Gaas(100)  Alignment  Matrix  Disks