SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Effects of seed layer on the realization of larger self-assembled coherent InAs/GaAs quantum dots
Liu HY; Xu B; Chen YH; Ding D; Wang ZG; Liu HY,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
2000
Source PublicationJOURNAL OF APPLIED PHYSICS
ISSN0021-8979
Volume88Issue:9Pages:5433-5436
AbstractThe size and shape evolution of self-assembled InAs quantum dots (QDs) influenced by 2.0 ML InAs seed layer has been systematically investigated for 2.0, 2.5, and 2.9 ML deposition on GaAs(100) substrate. Based on comparisons with the formation of large incoherent InAs islands on single-layer samples at late growth stage, the larger coherent InAs quantum dots at 2.9 ML deposition has been observed on the second InAs layer. A simple model analysis accounting for the surface strain distribution influenced by buried islands gives a stronger increment of critical QD diameter for dislocation nucleation on the second layer in comparison with the single-layer samples. Additionally, the inhibition of dislocation nucleation in InGaAs/GaAs large islands can also be explained by our theoretical results. (C) 2000 American Institute of Physics. [S0021-8979(00)08922-2].
metadata_83chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
KeywordInas Islands Growth Gaas Relaxation Evolution Gaas(100) Thickness Density Size
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2010-08-12
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/12410
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorLiu HY,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Recommended Citation
GB/T 7714
Liu HY,Xu B,Chen YH,et al. Effects of seed layer on the realization of larger self-assembled coherent InAs/GaAs quantum dots[J]. JOURNAL OF APPLIED PHYSICS,2000,88(9):5433-5436.
APA Liu HY,Xu B,Chen YH,Ding D,Wang ZG,&Liu HY,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China..(2000).Effects of seed layer on the realization of larger self-assembled coherent InAs/GaAs quantum dots.JOURNAL OF APPLIED PHYSICS,88(9),5433-5436.
MLA Liu HY,et al."Effects of seed layer on the realization of larger self-assembled coherent InAs/GaAs quantum dots".JOURNAL OF APPLIED PHYSICS 88.9(2000):5433-5436.
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