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Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer
Liu HY; Xu B; Ding D; Chen YH; Zhang JF; Wu J; Wang ZG; Liu HY,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
2001
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
Volume227Issue:0Pages:1005-1009
AbstractThe size and shape Evolution of self-assembled InAs quantum dots (QDs) influenced by 2.0-ML InAs seed layer has been systematically investigated for 2.0, 2.5, and 2.9-ML deposition on GaAs(1 0 0) substrate. Based on comparisons with the evolution of InAs islands on single layer samples at late growth stage, the bimodal size distribution of InAs islands at 2.5-ML InAs coverage and the formation of larger InAs quantum dots at 2.9-ML deposition have been observed on the second InAs layer. The further cross-sectional transmission electron microscopy measurement indicates the larger InAs QDs: at 2.9-ML deposition on the second layer are free of dislocation. In addition, the interpretations for the size and shape evolution of InAs/GaAs QDs on the second layer will be presented. (C) 2001 Elsevier Science B.V. All lights reserved.
metadata_83chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
KeywordLow Dimensional Structures Molecular Beam Epitaxy Nanomaterials Inas Islands Gaas Growth Gaas(100) Thickness Density
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2010-08-12
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/12186
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorLiu HY,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Recommended Citation
GB/T 7714
Liu HY,Xu B,Ding D,et al. Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer[J]. JOURNAL OF CRYSTAL GROWTH,2001,227(0):1005-1009.
APA Liu HY.,Xu B.,Ding D.,Chen YH.,Zhang JF.,...&Liu HY,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China..(2001).Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer.JOURNAL OF CRYSTAL GROWTH,227(0),1005-1009.
MLA Liu HY,et al."Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer".JOURNAL OF CRYSTAL GROWTH 227.0(2001):1005-1009.
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