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Intersubband absorption energy shifts in 3-level system for asymmetric quantum well terahertz emitters 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 108, 期号: 8, 页码: Art. No. 083112
Authors:  Song YF (Song Yafeng);  Lu YW (Lu Yanwu);  Zhang BA (Zhang Biao);  Xu XQ (Xu Xiaoqing);  Wang J (Wang Jun);  Guo Y (Guo Yan);  Shi K (Shi Kai);  Li ZW (Li Zhiwei);  Liu XL (Liu Xianglin);  Yang SY (Yang Shaoyan);  Zhu QS (Zhu Qinsheng);  Wang ZG (Wang Zhanguo);  Song, YF, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: songyafeng@semi.ac.cn
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Optical Phonon Energy  Inversion-layers  Transitions  Relaxation  Lasers  States  
Investigation of GaN layer grown on Si(111) substrate using an ultrathin AlN wetting layer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 236, 期号: 1-3, 页码: 77-84
Authors:  Lu Y;  Liu XL;  Lu DC;  Yuan HR;  Chen Z;  Fan TW;  Li YF;  Han PD;  Wang XH;  Wang D;  Wang ZG;  Lu DC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Substrates  Heteroepitaxy  Metalorganic Chemical Vapor Deposition  Gallium Compounds  Nitrides  Intermediate Layer  Epitaxial-growth  Silicon  Sapphire  Film  
A new method to fabricate InGaN quantum dots by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 235, 期号: 1-4, 页码: 188-194
Authors:  Chen Z;  Lu DH;  Yuan HR;  Han P;  Liu XL;  Li YF;  Wang XH;  Lu Y;  Wang ZG;  Lu DH,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat & Sci,POB 912,Beijing 100083,Peoples R China.
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Nanostructures  Metalorganic Chemical Vapor Deposition  Nitrides  Gan Buffer Layer  Epitaxial-growth  Phase Epitaxy  Surfaces  Temperature  Dependence  Mode  Wire  
Structure and photoluminescence of InGaAs quantum dots formed on an InAlAs wetting layer 期刊论文
CHINESE PHYSICS LETTERS, 2001, 卷号: 18, 期号: 10, 页码: 1411-1414
Authors:  Zhang YC;  Huang CJ;  Ye XL;  Xu B;  Ding D;  Wang JZ;  Li YF;  Liu FQ;  Wang ZG;  Zhang YC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China.
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Temperature-dependence  Carrier Transfer  Lasers  Gain  
Influence of growth conditions on self-assembled InAs nanostructures grown on (001)InP substrate by molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 223, 期号: 4, 页码: 518-522
Authors:  Li YF;  Lin F;  Xu B;  Liu FQ;  Ye WL;  Ding D;  Wang ZG;  Li YF,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Molecular Beam Epitaxy  Semiconductor Iii-v Materials  Quantum Dots  Surface-morphology  Low-threshold  Inp  Inp(001)  Luminescence  Organization  Islands  Layer  
Optical properties of InGaAs quantum dots formed on InAlAs wetting layer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 224, 期号: 1-2, 页码: 41-46
Authors:  Zhang YC;  Huang CJ;  Xu B;  Ye XL;  Ding D;  Wang JZ;  Li YF;  Liu F;  Wang ZG;  Zhang YC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Nanostructures  Molecular Beam Epitaxy  Semiconducting Iii-v Materials  Electron-phonon Interactions  Temperature-dependence  Semiconductor Nanocrystals  Carrier Transfer  Inas  Gaas  Lasers  Islands  Growth  Gain  
InAs self-assembled quantum dots grown on an InP (311)B substrate by molecular beam epitaxy 期刊论文
JOURNAL OF APPLIED PHYSICS, 2001, 卷号: 89, 期号: 7, 页码: 4186-4188
Authors:  Li YF;  Wang JZ;  Ye XL;  Xu B;  Liu FQ;  Ding D;  Zhang JF;  Wang ZG;  Li YF,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Matrix  Islands  Ingaas  
InAs self-assembled nanostructures grown on InP(001) 期刊论文
CHINESE PHYSICS, 2000, 卷号: 9, 期号: 3, 页码: 222-224
Authors:  Li YF;  Liu FQ;  Xu B;  Lin F;  Wu J;  Jiang WH;  Ding D;  Wang ZG;  Li YF,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China.
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Molecular-beam Epitaxy  Quantum Dots  Islands  Gaas  Threshold  Gaas(100)  Size  Inp  
Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 219, 期号: 3, 页码: 199-204
Authors:  Zhang YC;  Huang CJ;  Liu FQ;  Xu B;  Ding D;  Jiang WH;  Li YF;  Ye XL;  Wu J;  Chen YH;  Wang ZG;  Zhang YC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Quantum Dots  Inas/gaas  Mbe  Photoluminescence  Absorption  Optical-properties  Photoluminescence  Spectroscopy  Ingaas  Laser  
The effect of substrate orientation on the morphology of InAs nanostructures on (001) and (11n)A/B(n=1-5) InP substrates 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 218, 期号: 2-4, 页码: 203-208
Authors:  Sun ZZ;  Wu J;  Chen YH;  Liu FQ;  Ding D;  Li YF;  Xu B;  Wang ZG;  Sun ZZ,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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High-index Inp Substrate  In(Ca)As Nanostructures  Mbe  Molecular-beam-epitaxy  Ingaas Quantum Dots  Oriented Gaas  Optical Characterization  Islands