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Time delay in InGaN multiple quantum well laser diodes at room temperature 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 12, 页码: Article no.124211
Authors:  Jin LA;  Jiang DS;  Zhang ZM;  Liu ZS;  Zeng C;  Zhao DG;  Zhu JJ;  Wang H;  Duan LH;  Yang H;  Jin, LA, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. jilian@red.semi.ac.cn
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Ingan  Laser Diode  Delay Effect  Saturable Absorber  Traps  Light Emission  
Rapid thermal annealing properties of ZnO films grown using methanol as oxidant 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 卷号: 40, 期号: 19, 页码: 6010-6013
Authors:  Zhang PF (Zhang, P. F.);  Liu XL (Liu, X. L.);  Wei HY (Wei, H. Y.);  Fan HB (Fan, H. B.);  Liang ZM (Liang, Z. M.);  Jin P (Jin, P.);  Yang SY (Yang, S. Y.);  Jiao CM (Jiao, C. M.);  Zhu QS (Zhu, Q. S.);  Wang ZG (Wang, Z. G.);  Zhang, PF, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhangpanf@semi.ac.cn;  xlliu@semi.ac.cn
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Chemical-vapor-deposition  
Observations on subband electron properties in In0.65Ga0.35As/In0.52Al0.48As MM-HEMT with Si delta-doped on the barriers 期刊论文
ACTA PHYSICA SINICA, 2007, 卷号: 56, 期号: 7, 页码: 4143-4147
Authors:  Zhou WZ (Zhou Wen-Zheng);  Lin T (Lin Tie);  Shang LY (Shang Li-Yan);  Huang ZM (Huang Zhi-Ming);  Zhu B (Zhu Bo);  Cui LJ (Cui Li-Jie);  Gao HL (Gao Hong-Ling);  Li DL (Li Dong-Lin);  Guo SL (Guo Shao-Ling);  Gui YS (Gui Yong-Sheng);  Chu JH (Chu Jun-Hao);  Zhou, WZ, Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China. 电子邮箱地址: jhchu@mail.sitp.ac.cn
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Sdh Oscillation  
双δ掺杂In_(0.65)Ga_(0.35)As/In_(0.52)Al_(0.48)As赝型高迁移率晶体管材料子带电子特性研究 期刊论文
物理学报, 2007, 卷号: 56, 期号: 7, 页码: 4143-4147
Authors:  周文政;  林铁;  商丽燕;  黄志明;  朱博;  崔利杰;  高宏玲;  李东临;  郭少令;  桂永胜;  褚君浩
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ZnS1-xTex混晶的压力光谱 期刊论文
半导体学报, 2003, 卷号: 24, 期号: 4, 页码: 370-376
Authors:  方再利;  葛惟锟;  苏付海;  马宝珊;  刘南竹;  朱作明;  丁琨;  韩和相;  李国华;  苏萌强
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Photoluminescence from ZnS1-xTex alloys under hydrostatic pressure 期刊论文
PHYSICAL REVIEW B, 2002, 卷号: 66, 期号: 8, 页码: Art.No.085203
Authors:  Fang ZL;  Li GH;  Liu NZ;  Zhu ZM;  Han HX;  Ding K;  Ge WK;  Sou IK;  Fang ZL,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
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Zns-te  Absorption-edge  Mixed-crystals  Zinc-sulfide  Thin-films  Transition  Excitons  Centers  Strains  Band  
Longitudinal optic phonon-plasmon coupling in delta-doped metamorphic InAlAs/InGaAs high-electron-mobility transistor structures on GaAs substrates 期刊论文
APPLIED PHYSICS LETTERS, 2001, 卷号: 79, 期号: 9, 页码: 1375-1377
Authors:  Jiang CP;  Huang ZM;  Li ZF;  Yu J;  Guo SL;  Lu W;  Chu JH;  Cui LJ;  Zeng YP;  Zhu ZP;  Wang BQ;  Jiang CP,Chinese Acad Sci,Shanghai Inst Tech Phys,Natl Lab Infrared Phys,Shanghai 200083,Peoples R China.
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Quantum-wells  Accumulation Layer  Raman-scattering  Excitations  Ga1-xinxas  Spectra  
Subband electron properties of highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates 期刊论文
APPLIED PHYSICS LETTERS, 2001, 卷号: 79, 期号: 12, 页码: 1909-1911
Authors:  Jiang CP;  Huang ZM;  Guo SL;  Chu JH;  Cui LJ;  Zeng YP;  Zhu ZP;  Wang BQ;  Jiang CP,Chinese Acad Sci,Shanghai Inst Tech Phys,Natl Lab Infrared Phys,Shanghai 200083,Peoples R China.
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High-performance  Hemts  Heterostructures  
Photoluminescence studies of type-II self-assembled InAlAs/AlGaAs QDs grown on (311)A GaAs substrate 期刊论文
JOURNAL OF INFRARED AND MILLIMETER WAVES, 2001, 卷号: 20, 期号: 1, 页码: 53-56
Authors:  Chen Y;  Li GH;  Zhu ZM;  Han HX;  Wang ZP;  Zhou W;  Wang ZG;  Chen Y,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,Beijing 100083,Peoples R China.
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Inalas/algaas  Quantum Dot  Pressure  Photoluminescence  Quantum Dots  Pressure  Superlattices  Linewidth  Insb  Gasb  
生长在(311)A面GaAs衬底上的InAlAs/AlGaAsⅡ型量子点的光致发光研究 期刊论文
红外与毫米波学报, 2001, 卷号: 20, 期号: 1, 页码: 53
Authors:  陈晔;  李国华;  朱作明;  韩和相;  汪兆平;  周伟;  王占国
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