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Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes
Wei, TB; Ji, XL; Wu, K; Zheng, HY; Du, CX; Chen, Y; Yan, QF; Zhao, LX; Zhou, Z; Wang, JX; Li, JM
2014
Source PublicationOPTICS LETTERS
Volume39Issue:2Pages:379-382
Subject Area半导体器件
Indexed BySCI
Language英语
Date Available2015-03-25
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26161
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Wei, TB,Ji, XL,Wu, K,et al. Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes[J]. OPTICS LETTERS,2014,39(2):379-382.
APA Wei, TB.,Ji, XL.,Wu, K.,Zheng, HY.,Du, CX.,...&Li, JM.(2014).Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes.OPTICS LETTERS,39(2),379-382.
MLA Wei, TB,et al."Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes".OPTICS LETTERS 39.2(2014):379-382.
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