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Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots 期刊论文
NANOSCALE RESEARCH LETTERS, 2012, 卷号: 7, 页码: 600
Authors:  Zhang HY (Zhang, Hongyi);  Chen YH (Chen, Yonghai);  Zhou GY (Zhou, Guanyu);  Tang CG (Tang, Chenguang);  Wang ZG (Wang, Zhanguo)
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Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots 期刊论文
Nanoscale Research Letters, 2012, 卷号: 7
Authors:  Zhang, Hongyi;  Chen, Yonghai;  Zhou, Guanyu;  Tang, Chenguang;  Wang, Zhanguo
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InAs/GaAs 体系纳米结构的生长动力学研究 学位论文
, 北京: 中国科学院研究生院, 2011
Authors:  周冠宇
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Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 8, 页码: Article no.83501
Authors:  Zhou XL;  Chen YH;  Zhang HY;  Zhou GY;  Li TF;  Liu JQ;  Ye XL;  Xu B;  Wang ZG;  Zhou, XL, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. zhouxl06@semi.ac.cn
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Inas Islands  Mu-m  Escape  Gaas  Gaas(100)  Substrate  
Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 9, 页码: Article no.94311
Authors:  Zhou XL;  Chen YH;  Li TF;  Zhou GY;  Zhang HY;  Ye XL;  Xu B;  Wang ZG;  Zhou, XL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. zhouxl06@semi.ac.cn
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Self-organized Islands  Molecular-beam-epitaxy  Optical-properties  Surfaces  Emission  Density  Size