SEMI OpenIR  > 中科院半导体材料科学重点实验室
Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy
Sang, L; Zhu, QS; Yang, SY; Liu, GP; Li, HJ; Wei, HY; Jiao, CM; Liu, SM; Wang, ZG; Zhou, XW; Mao, W; Hao, Y; Shen, B
2014
Source PublicationNANOSCALE RESEARCH LETTERS
Volume9Pages:470
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2015-03-25
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26179
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Sang, L,Zhu, QS,Yang, SY,et al. Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy[J]. NANOSCALE RESEARCH LETTERS,2014,9:470.
APA Sang, L.,Zhu, QS.,Yang, SY.,Liu, GP.,Li, HJ.,...&Shen, B.(2014).Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy.NANOSCALE RESEARCH LETTERS,9,470.
MLA Sang, L,et al."Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy".NANOSCALE RESEARCH LETTERS 9(2014):470.
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