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硅基室温电流注入Ge/Si异质结发光二极管 期刊论文
激光与光电子学进展, 2010, 卷号: 47, 期号: 3, 页码: 14-14
Authors:  胡炜玄;  成步文;  薛春来;  薛海韵;  苏少坚;  白安琪;  罗丽萍;  俞育德;  王启明
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Electroluminescence from Ge on Si substrate at room temperature 期刊论文
APPLIED PHYSICS LETTERS, 2009, 卷号: 95, 期号: 9, 页码: Art. No. 092102
Authors:  Hu WX;  Cheng BW;  Xue CL;  Xue HY;  Su SJ;  Bai AQ;  Luo LP;  Yu YD;  Wang QM;  Cheng BW Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China. E-mail Address: cbw@semi.ac.cn
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Semiconductors  Dependence  Silicon  Gap  
Si衬底上Ge材料的UHVCVD生长 期刊论文
材料科学与工程学报, 2009, 卷号: 27, 期号: 1, 页码: 118-120
Authors:  成步文;  薛春来;  罗丽萍;  韩根全;  曾玉刚;  薛海韵;  王启明
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Low threading-dislocation-density Ge film on Si grown on a pitting Ge buffer layer 会议论文
2008 5TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS, Sorrento, ITALY, SEP 17-19, 2008
Authors:  Cheng BW;  Xue HY;  Hu D;  Han GQ;  Zeng YG;  Bai AQ;  Xue CL;  Luo LP;  Zuo YH;  Wang QM;  Cheng, BW, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
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Sige/si(100) Epitaxial-films  
Investigation of Ge-Si atomic interdiffusion in Ge nano-dots multilayer structure by double crystal X-ray diffraction 期刊论文
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2007, 卷号: 23, 期号: 3, 页码: 301-303
Authors:  Shi WH (Shi Wenhua);  Zhao L (Zhao Lei);  Luo LP (Luo Liping);  Wang QM (Wang Qiming);  Shi, WH, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: whshi@red.semi.ac.cn
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X-ray Diffraction  
在Si基片上生长高密度超小型Ge量子点的方法 专利
专利类型: 发明, 申请日期: 2006-03-15, 公开日期: 2009-06-04, 2009-06-11
Inventors:  时文华;  李传波;  王容伟;  罗丽萍;  王启明
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Fabrication of Ge nano-dot heterojunction phototransistors for improved light detection at 1.55 mu m 期刊论文
CHINESE PHYSICS LETTERS, 2006, 卷号: 23, 期号: 3, 页码: 735-737
Authors:  Shi WH;  Mao RW;  Zhao L;  Luo LP;  Wang QM;  Shi, WH, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail: whshi@red.semi.ac.cn
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Silicon  Heterostructures  
硅基高量子效率共振腔增强型探测器及制作方法 专利
专利类型: 发明, 申请日期: 2005-06-08, 公开日期: 2009-06-04, 2009-06-11
Inventors:  毛容伟;  滕学公;  李传波;  左玉华;  罗丽萍;  成步文;  于金中;  王启明
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Thermally tunable optical filter with crystalline silicon as cavity 期刊论文
OPTICS COMMUNICATIONS, 2005, 卷号: 244, 期号: 1-6, 页码: 167-170
Authors:  Li CB;  Zuo YH;  Cheng BW;  Mao RW;  Zhao L;  Shi WH;  Luo LP;  Yu JZ;  Wang QM;  Li, CB, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: cbli@mail.semi.ac.cn
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Thermally Tunable Filter  
Demonstration of low-cost Si-based tunable long-wavelength resonant-cavity-enhanced photodetectors 期刊论文
APPLIED PHYSICS LETTERS, 2005, 卷号: 86, 期号: 3, 页码: Art.No.033502
Authors:  Mao RW;  Zuo YH;  Li CB;  Cheng BW;  Teng XG;  Luo LP;  Yu JZ;  Wang QM;  Mao, RW, Chinese Acad Sci, Inst Semicond, State Key Joint Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: maorongwei@red.semi.ac.cn
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Quantum-efficiency