SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Investigation of Ge-Si atomic interdiffusion in Ge nano-dots multilayer structure by double crystal X-ray diffraction
Shi WH (Shi Wenhua); Zhao L (Zhao Lei); Luo LP (Luo Liping); Wang QM (Wang Qiming); Shi, WH, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: whshi@red.semi.ac.cn
2007
Source PublicationJOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
ISSNISSN: 1005-0302
Volume23Issue:3Pages:301-303
AbstractThe fluctuations of the strained layer in a superlattice or quantum well can broaden the width of satellite peaks in double crystal X-ray diffraction (DCXRD) pattern. It is found that the width of the 0(th) peak is directly proportional to the fluctuation of the strained layer if the other related facts are ignored. By this method, the Ge-Si atomic interdiffusion in Ge nano-dots and wetting layers has been investigated by DCXRD. It is found that thermal annealing can activate Ge-Si atomic interdiffusion and the interdiffusion in the nano-dots area is much stronger than that in the wetting layer area. Therefore the fluctuation of the Ge layer decreases and the distribution of Ge atoms becomes homogeneous in the horizontal Ge (GeSi actually) layer, which make the width of the 0(th) peak narrow after annealing.
metadata_83chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
KeywordX-ray Diffraction
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2010-03-29
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/9394
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorShi, WH, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: whshi@red.semi.ac.cn
Recommended Citation
GB/T 7714
Shi WH ,Zhao L ,Luo LP ,et al. Investigation of Ge-Si atomic interdiffusion in Ge nano-dots multilayer structure by double crystal X-ray diffraction[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2007,23(3):301-303.
APA Shi WH ,Zhao L ,Luo LP ,Wang QM ,&Shi, WH, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: whshi@red.semi.ac.cn.(2007).Investigation of Ge-Si atomic interdiffusion in Ge nano-dots multilayer structure by double crystal X-ray diffraction.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,23(3),301-303.
MLA Shi WH ,et al."Investigation of Ge-Si atomic interdiffusion in Ge nano-dots multilayer structure by double crystal X-ray diffraction".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 23.3(2007):301-303.
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