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Influence of growth and annealing temperature on the strain and surface morphology of Ge995Sn0.005 epilayer 期刊论文
Applied Surface Science, 2015, 卷号: 340, 页码: 132-137.
Authors:  Su Shaojian;  Zhang Dongliang;  Xue Chunlai;  Cheng Buwen
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Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation 期刊论文
SOLID-STATE ELECTRONICS, 2013, 卷号: 83, 页码: 66-70
Authors:  Wang, Lanxiang;  Su, Shaojian;  Wang, Wei;  Gong, Xiao;  Yang, Yue;  Guo, Pengfei;  Zhang, Guangze;  Xue, Chunlai;  Cheng, Buwen;  Han, Genquan;  Yeo, Yee-Chia
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Sub-400 degrees C Si2H6 Passivation, HfO2 Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnx CMOS 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 卷号: 60, 期号: 5, 页码: 1640-1648
Authors:  Gong, Xiao;  Han, Genquan;  Liu, Bin;  Wang, Lanxiang;  Wang, Wei;  Yang, Yue;  Kong, Eugene Yu-Jin;  Su, Shaojian;  Xue, Chunlai);  Cheng, Buwen;  Yeo, Yee-Chia
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Strain Field Mapping of Dislocations in a Ge/Si Heterostructure 期刊论文
PLOS ONE, 2013, 卷号: 8, 期号: 4, 页码: e62672
Authors:  Liu, Quanlong;  Zhao, Chunwang;  Su, Shaojian;  Li, Jijun;  Xing, Yongming;  Cheng, Buwen
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High-responsivity GeSn short-wave infrared p-i-n photodetectors 期刊论文
APPLIED PHYSICS LETTERS, 2013, 卷号: 102, 期号: 14, 页码: 141111
Authors:  Zhang, Dongliang;  Xue, Chunlai;  Cheng, Buwen;  Su, Shaojian;  Liu, Zhi;  Zhang, Xu;  Zhang, Guangze;  Li, Chuanbo;  Wang, Qiming
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Germanium-Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 degrees C Si2H6 Passivation 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2013, 卷号: 34, 期号: 3, 页码: 339-341
Authors:  Gong, Xiao;  Han, Genquan;  Bai, Fan;  Su, Shaojian;  Guo, Pengfei;  Yang, Yue;  Cheng, Ran;  Zhang, Dongliang;  Zhang, Guangze;  Xue, Chunlai;  Cheng, Buwen;  Pan, Jisheng;  Zhang, Zheng;  Tok, Eng Soon;  Antoniadis, Dimitri;  Yeo, Yee-Chia
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GeSn合金的晶格常数对Vegard定律的偏离 期刊论文
物理学报, 2012, 卷号: 61, 期号: 17, 页码: 176104-1-176104-5
Authors:  苏少坚,成步文,薛春来,张东亮,张广泽,王启明
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Ge-on-Si for Si-based integrated materials and photonic devices 期刊论文
Frontiers of Optoelectronics, 2012, 卷号: 5, 期号: 1, 页码: 41-50
Authors:  Hu Weixuan,Cheng Buwen,Xue Chunlai,Su Shaojian,Xue Haiyun,Zuo Yuhua,Wang Qiming
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Enhanced photoluminescence and electroluminescence of multilayer GeSi islands on Si(001) substrates by phosphorus-doping 期刊论文
OPTICS EXPRESS, 2012, 卷号: 20, 期号: 20, 页码: 22327-22333
Authors:  Liu Z (Liu, Zhi);  Hu WX (Hu, Weixuan);  Su SJ (Su, Shaojian);  Li C (Li, Chong);  Li CB (Li, Chuanbo);  Xue CL (Xue, Chunlai);  Li YM (Li, Yaming);  Zuo YH (Zuo, Yuhua);  Cheng BW (Cheng, Buwen);  Wang QM (Wang, Qiming)
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无权访问的条目 学位论文
Authors:  苏少坚
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