SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
在Si基片上生长高密度超小型Ge量子点的方法
时文华; 李传波; 王容伟; 罗丽萍; 王启明
2006-03-15
Date Available2009-06-04 ; 2009-06-11
Subtype发明
Application Date2004-09-10
Language中文
Application NumberCN200410074362.1
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/3193
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
时文华,李传波,王容伟,等. 在Si基片上生长高密度超小型Ge量子点的方法[P]. 2006-03-15.
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