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硅基室温电流注入Ge/Si异质结发光二极管 期刊论文
激光与光电子学进展, 2010, 卷号: 47, 期号: 3, 页码: 14-14
Authors:  胡炜玄;  成步文;  薛春来;  薛海韵;  苏少坚;  白安琪;  罗丽萍;  俞育德;  王启明
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Si衬底上Ge材料的UHVCVD生长 期刊论文
材料科学与工程学报, 2009, 卷号: 27, 期号: 1, 页码: 118-120
Authors:  成步文;  薛春来;  罗丽萍;  韩根全;  曾玉刚;  薛海韵;  王启明
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Investigation of Ge-Si atomic interdiffusion in Ge nano-dots multilayer structure by double crystal X-ray diffraction 期刊论文
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2007, 卷号: 23, 期号: 3, 页码: 301-303
Authors:  Shi WH (Shi Wenhua);  Zhao L (Zhao Lei);  Luo LP (Luo Liping);  Wang QM (Wang Qiming);  Shi, WH, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: whshi@red.semi.ac.cn
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X-ray Diffraction  
DCXRD Investigation of a Ge/Si(001) Island Multilayer Structure 期刊论文
半导体学报, 2007, 卷号: 28, 期号: 2, 页码: 145-148
Authors:  Shi Wenhua;  Xue Chunlai;  Luo Liping;  Wang Qiming
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在Si基片上生长高密度超小型Ge量子点的方法 专利
专利类型: 发明, 申请日期: 2006-03-15, 公开日期: 2009-06-04, 2009-06-11
Inventors:  时文华;  李传波;  王容伟;  罗丽萍;  王启明
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Growth of near planar Si0.5Ge0.5 epitaxial layers directly on Si substrate by UHV/CVD at 500℃ 期刊论文
功能材料与器件学报, 2006, 卷号: 12, 期号: 1, 页码: 5-9
Authors:  ZHAO Lei;  Zuo Yuhua;  Li Chuanbo;  Cheng Buwen;  Luo Liping;  Yu Jinzhong;  Wang Qiming
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硅基高量子效率共振腔增强型探测器及制作方法 专利
专利类型: 发明, 申请日期: 2005-06-08, 公开日期: 2009-06-04, 2009-06-11
Inventors:  毛容伟;  滕学公;  李传波;  左玉华;  罗丽萍;  成步文;  于金中;  王启明
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硅基1.55μm可调谐共振腔窄带光电探测器的研究 期刊论文
光子学报, 2005, 卷号: 34, 期号: 12, 页码: 1783-1787
Authors:  毛容伟;  成步文;  李传波;  左玉华;  滕学公;  罗丽萍;  余金中;  王启明
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Fabrication of 1.55μm Si-Based Resonant Cavity Enhanced Photodetectors 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 2, 页码: 271-275
Authors:  Mao Rongwei;  Zuo Yuhua;  Li Chuanbo;  Cheng Buwen;  Teng Xuegong;  Luo Liping;  Zhang Heshun;  Yu Jinzhong;  Wang Qiming
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带隙法测定SiGe/Si材料的应变状态 期刊论文
物理学报, 2005, 卷号: 54, 期号: 9, 页码: 4350-4353
Authors:  成步文;  姚飞;  薛春来;  张建国;  李传波;  毛容伟;  左玉华;  罗丽萍;  王启明
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