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Anomalous coarsening of self-assembled InAs quantum dots on vicinal GaAs (100) substrates 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 卷号: 42, 期号: 5, 页码: Art. No. 055310
Authors:  Liang S;  Zhu HL;  Ye XL;  Pan JQ;  Zhao LJ;  Wang W;  Liang S Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China.
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Chemical-vapor-deposition  Multiatomic Steps  Islands  Growth  Fabrication  Epitaxy  
Shape and spatial correlation control of InAs-InAlAs-InP(001) nanostructure superlattices 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 6, 页码: Art.No.063114
Authors:  Lei W;  Chen YH;  Jin P;  Ye XL;  Wang YL;  Xu B;  Wang ZG;  Lei, W, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: yhchen@red.semi.ac.cn
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Vertical Self-organization  Quantum Wires  Surface  Growth  Alloy  Inalas/inp(001)  Nanowires  Inp(001)  Islands  Arrays  
Growth of InAs quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition and their optical properties 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2006, 卷号: 289, 期号: 2, 页码: 477-484
Authors:  Liang S;  Zhu HL;  Pan JQ;  Ye XL;  Wang W;  Liang, S, Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China. E-mail: liangsong@red.semi.ac.cn
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Bimodal Size Distribution  Metalorganic Vapor Phase Epitaxy  Self-assembled Quantum Dots  Indium Arsenide  Phase-epitaxy  Islands  Ingaas  Size  Laser  
Optical properties of InGaAs quantum dots formed on InAlAs wetting layer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 224, 期号: 1-2, 页码: 41-46
Authors:  Zhang YC;  Huang CJ;  Xu B;  Ye XL;  Ding D;  Wang JZ;  Li YF;  Liu F;  Wang ZG;  Zhang YC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Nanostructures  Molecular Beam Epitaxy  Semiconducting Iii-v Materials  Electron-phonon Interactions  Temperature-dependence  Semiconductor Nanocrystals  Carrier Transfer  Inas  Gaas  Lasers  Islands  Growth  Gain  
InAs self-assembled quantum dots grown on an InP (311)B substrate by molecular beam epitaxy 期刊论文
JOURNAL OF APPLIED PHYSICS, 2001, 卷号: 89, 期号: 7, 页码: 4186-4188
Authors:  Li YF;  Wang JZ;  Ye XL;  Xu B;  Liu FQ;  Ding D;  Zhang JF;  Wang ZG;  Li YF,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Matrix  Islands  Ingaas  
Structural and optical characterization of InAs nanostructures grown on (001) and high index InP substrates 期刊论文
APPLIED SURFACE SCIENCE, 2000, 卷号: 167, 期号: 3-4, 页码: 191-196
Authors:  Li YF;  Ye XL;  Liu FQ;  Xu B;  Ding D;  Jiang WH;  Sun ZZ;  Liu HY;  Zhang YC;  Wang ZG;  Li YF,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Self-assembled Quantum Dots  Molecular Beam Epitaxy  High Index  Molecular-beam Epitaxy  Vapor-phase Epitaxy  Quantum Dots  Islands  Inp(001)  Ingaas  
Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates 期刊论文
PHYSICA E, 2000, 卷号: 8, 期号: 2, 页码: 164-169
Authors:  Sun ZZ;  Liu FQ;  Wu J;  Ye XL;  Ding D;  Xu B;  Liang JB;  Wang ZG;  Sun ZZ,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Self-assembled Quantum Dots  Inp Substrate  High Index  Mbe  In(Ga  Molecular-beam-epitaxy  Al)as/inAlas/inp  Vapor-phase Epitaxy  Gaas  Islands  Photoluminescence  Inp(001)  Growth  Lasers  
Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy 期刊论文
PHYSICA E, 2000, 卷号: 8, 期号: 2, 页码: 134-140
Authors:  Jiang WH;  Xu HZ;  Xu B;  Ye XL;  Zhou W;  Ding D;  Liang JB;  Wang ZG;  Jiang WH,Chinese Acad Sci,Inst Semicond,Inst Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Quantum Dots  High Index  Molecular Beam Epitaxy  Photoluminescence  Surface Segregation  Oriented Gaas  Ingaas  Islands  Wells  Disks  
Room temperature 1.55 mu m emission from InAs quantum dots grown on (001)InP substrate by molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 218, 期号: 2-4, 页码: 451-454
Authors:  Li YF;  Ye XL;  Xu B;  Liu FQ;  Ding D;  Jiang WH;  Sun ZZ;  Zhang YC;  Liu HY;  Wang ZG;  Li YF,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Quantum Dots  Molecular Beam Epitaxy  Inas/inp  Inp  Islands  Gaas  Matrix