SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy
Jiang WH; Xu HZ; Xu B; Ye XL; Zhou W; Ding D; Liang JB; Wang ZG; Jiang WH,Chinese Acad Sci,Inst Semicond,Inst Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
2000
Source PublicationPHYSICA E
ISSN1386-9477
Volume8Issue:2Pages:134-140
AbstractIn this paper, In0.5Ga0.5As quantum dots are fabricated on GaAs (100) and (n11)A/B (n = 3, 5) substrates by molecular beam epitaxy. Atomic force microscopy shows that the quantum dots on each oriented substrate are different in size, shape and distribution. In addition, photoluminescence spectra from these quantum dots are different in emission peak position, line width and integrated intensity. Auger electron spectra demonstrate that In concentration is larger near the surface than inside quantum dots, suggesting the occurrence of surface segregation effect during the growth of InGaAs dots. The surface segregation effect is found to be related to substrate orientation. (C) 2000 Elsevier Science B.V. All rights reserved.
metadata_83chinese acad sci, inst semicond, inst semicond mat sci, beijing 100083, peoples r china
KeywordQuantum Dots High Index Molecular Beam Epitaxy Photoluminescence Surface Segregation Oriented Gaas Ingaas Islands Wells Disks
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2010-08-12
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/12488
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorJiang WH,Chinese Acad Sci,Inst Semicond,Inst Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Recommended Citation
GB/T 7714
Jiang WH,Xu HZ,Xu B,et al. Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy[J]. PHYSICA E,2000,8(2):134-140.
APA Jiang WH.,Xu HZ.,Xu B.,Ye XL.,Zhou W.,...&Jiang WH,Chinese Acad Sci,Inst Semicond,Inst Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China..(2000).Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy.PHYSICA E,8(2),134-140.
MLA Jiang WH,et al."Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy".PHYSICA E 8.2(2000):134-140.
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