SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
InAs self-assembled quantum dots grown on an InP (311)B substrate by molecular beam epitaxy
Li YF; Wang JZ; Ye XL; Xu B; Liu FQ; Ding D; Zhang JF; Wang ZG; Li YF,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
2001
Source PublicationJOURNAL OF APPLIED PHYSICS
ISSN0021-8979
Volume89Issue:7Pages:4186-4188
AbstractSelf-assembled InAs quantum dots (QDs) have been grown by solid-source molecular beam epitaxy on a (311)B InP substrate. Transmission electron microscopy clearly shows that a high density of smaller InAs islands can be obtained by using such a high index substrate. After introducing a lattice-matched underlying In0.52Al0.24Ga0.24As layer, the InAs QDs are much more uniform in size and form two-dimensional well ordered arrays. The photoluminescence (PL) spectra also confirm that the InAs QDs grown on underlying In0.52Al0.24Ga0.24As have a better quality than those grown in the In0.52Al0.48As matrix. A simple calculation indicates that the redshift of the PL peak energy mainly results from InAs QDs on underlying In0.52Al0.24Ga0.24As of large size. (C) 2001 American Institute of Physics.
metadata_83chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
KeywordMatrix Islands Ingaas
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2010-08-12
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/12262
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorLi YF,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Recommended Citation
GB/T 7714
Li YF,Wang JZ,Ye XL,et al. InAs self-assembled quantum dots grown on an InP (311)B substrate by molecular beam epitaxy[J]. JOURNAL OF APPLIED PHYSICS,2001,89(7):4186-4188.
APA Li YF.,Wang JZ.,Ye XL.,Xu B.,Liu FQ.,...&Li YF,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China..(2001).InAs self-assembled quantum dots grown on an InP (311)B substrate by molecular beam epitaxy.JOURNAL OF APPLIED PHYSICS,89(7),4186-4188.
MLA Li YF,et al."InAs self-assembled quantum dots grown on an InP (311)B substrate by molecular beam epitaxy".JOURNAL OF APPLIED PHYSICS 89.7(2001):4186-4188.
Files in This Item:
File Name/Size DocType Version Access License
1201.pdf(143KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Li YF]'s Articles
[Wang JZ]'s Articles
[Ye XL]'s Articles
Baidu academic
Similar articles in Baidu academic
[Li YF]'s Articles
[Wang JZ]'s Articles
[Ye XL]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Li YF]'s Articles
[Wang JZ]'s Articles
[Ye XL]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.