SEMI OpenIR

Browse/Search Results:  1-10 of 24 Help

Selected(0)Clear Items/Page:    Sort:
Surface Emitting Distributed Feedback Quantum Cascade Laser around 8.3 mu m 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 11, 页码: Art. No. 114214
Authors:  Guo WH (Guo Wan-Hong);  Liu JQ (Liu Jun-Qi);  Lu QY (Lu Quan-Yong);  Zhang W (Zhang Wei);  Jiang YC (Jiang Yu-Chao);  Li L (Li Lu);  Wang LJ (Wang Li-Jun);  Liu FQ (Liu Feng-Qi);  Wang ZG (Wang Zhan-Guo);  Guo, WH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: jqliu@semi.ac.cn
Adobe PDF(760Kb)  |  Favorite  |  View/Download:999/293  |  Submit date:2010/12/05
Photonic-crystal  Emission  
Thermal redistribution of photocarriers between bimodal quantum dots 期刊论文
JOURNAL OF APPLIED PHYSICS, 2001, 卷号: 90, 期号: 4, 页码: 1973-1976
Authors:  Zhang YC;  Huang CJ;  Liu FQ;  Xu B;  Wu J;  Chen YH;  Ding D;  Jiang WH;  Ye XL;  Wang ZG;  Zhang YC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(178Kb)  |  Favorite  |  View/Download:994/374  |  Submit date:2010/08/12
Temperature-dependence  Carrier Relaxation  Emission  
Substrate dependence of InGaAs quantum dots grown by molecular beam epitaxy 期刊论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 卷号: 19, 期号: 1, 页码: 197-201
Authors:  Jiang WH;  Xu HZ;  Xu B;  Zhou W;  Gong Q;  Ding D;  Liang JB;  Wang ZG;  Jiang WH,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(818Kb)  |  Favorite  |  View/Download:973/302  |  Submit date:2010/08/12
Oriented Gaas  Inas Islands  High-index  Surfaces  Temperature  Topography  Strain  Laser  
Structural anisotropy and optical properties of InxGa1-xAs quantum dots on GaAs(001) 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 223, 期号: 1-2, 页码: 55-60
Authors:  Lin F;  Wu J;  Jiang WH;  Cui H;  Wang ZG;  Lin F,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(378Kb)  |  Favorite  |  View/Download:878/260  |  Submit date:2010/08/12
Low Dimensional Structures  Molecular Beam Epitaxy  Semiconducting Iii-v Materials  Molecular-beam Epitaxy  Gaas  Growth  Photoluminescence  Surfaces  Arrays  Laser  
Anomalous temperature dependence of photoluminescence from InAs quantum dots 期刊论文
JOURNAL OF APPLIED PHYSICS, 2000, 卷号: 88, 期号: 5, 页码: 2529-2532
Authors:  Jiang WH;  Ye XL;  Xu B;  Xu HZ;  Ding D;  Liang JB;  Wang ZG;  Jiang WH,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(53Kb)  |  Favorite  |  View/Download:891/327  |  Submit date:2010/08/12
Wells  (In  Ga)as/Gaas  
Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 219, 期号: 3, 页码: 199-204
Authors:  Zhang YC;  Huang CJ;  Liu FQ;  Xu B;  Ding D;  Jiang WH;  Li YF;  Ye XL;  Wu J;  Chen YH;  Wang ZG;  Zhang YC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(233Kb)  |  Favorite  |  View/Download:1169/424  |  Submit date:2010/08/12
Quantum Dots  Inas/gaas  Mbe  Photoluminescence  Absorption  Optical-properties  Photoluminescence  Spectroscopy  Ingaas  Laser  
Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy 会议论文
PHYSICA E, 8 (2), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
Authors:  Jiang WH;  Xu HZ;  Xu B;  Ye XL;  Zhou W;  Ding D;  Liang JB;  Wang ZG;  Jiang WH Chinese Acad Sci Inst Semicond Inst Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(320Kb)  |  Favorite  |  View/Download:918/285  |  Submit date:2010/11/15
Quantum Dots  High Index  Molecular Beam Epitaxy  Photoluminescence  Surface Segregation  Oriented Gaas  Ingaas  Islands  Wells  Disks  
Structural and photoluminescence properties of In-0.9(Ga/Al)(0.1)As self-assembled quantum dots on InP substrate 期刊论文
JOURNAL OF APPLIED PHYSICS, 2000, 卷号: 88, 期号: 1, 页码: 533-536
Authors:  Sun S;  Wu J;  Liu FQ;  Zu HZ;  Chen YH;  Ye XL;  Jiang WH;  Xu B;  Wang ZG;  Sun S,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(152Kb)  |  Favorite  |  View/Download:788/247  |  Submit date:2010/08/12
Molecular-beam Epitaxy  Inas Islands  Inp(001)  Growth  Gaas  Semiconductors  Thickness  Lasers  Ingaas  Size  
Self-organized type-II In0.55Al0.45As/Al0.50Ga0.50As quantum dots realized on GaAs(311)A 期刊论文
APPLIED PHYSICS LETTERS, 2000, 卷号: 76, 期号: 25, 页码: 3741-3743
Authors:  Liu HY;  Zhou W;  Ding D;  Jiang WH;  Xu B;  Liang JB;  Wang ZG;  Liu HY,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(248Kb)  |  Favorite  |  View/Download:841/249  |  Submit date:2010/08/12
Visible Photoluminescence  Linewidth  Injection  Emission  Wires  Laser  
Photoluminescence study of InAlAs quantum dots grown on differently oriented surfaces 期刊论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 卷号: 18, 期号: 1, 页码: 21-24
Authors:  Zhou W;  Xu B;  Xu HZ;  Jiang WH;  Liu FQ;  Gong Q;  Ding D;  Liang JB;  Wang ZG;  Zhu ZM;  Li GH;  Zhou W,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(127Kb)  |  Favorite  |  View/Download:805/237  |  Submit date:2010/08/12
Molecular-beam Epitaxy  3-dimensional Island Formation  Monolayer Coverage  Gaas  Inas  Ingaas  Temperature  Inxga1-xas  Ensembles  Gaas(100)