SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Structural and optical characterization of InAs nanostructures grown on (001) and high index InP substrates
Li YF; Ye XL; Liu FQ; Xu B; Ding D; Jiang WH; Sun ZZ; Liu HY; Zhang YC; Wang ZG; Li YF,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
2000
Source PublicationAPPLIED SURFACE SCIENCE
ISSN0169-4332
Volume167Issue:3-4Pages:191-196
AbstractThe effects of InP substrate orientations on self-assembled InAs quantum dots (QDs) have been investigated by molecular beam epitaxy (MBE). A comparison between atomic force microscopy (AFM) and photoluminescence (PL) spectra shows that a high density of smaller InAs islands can be obtained by using such high index substrates. On the other hand, by introducing a lattice-matched underlying In0.52Al0.24Ga0.24As layer, the InAs QDs can be much more uniform in size and have a great improvement in PL properties. More importantly, 1.55-mu m luminescence at room temperature (RT) can be realized in InAs QDs deposited on (001) InP substrate with underlying In0.52Al0.24Ga0.24As layer. (C) 2000 Elsevier Science B.V. All rights reserved.
metadata_83chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
KeywordSelf-assembled Quantum Dots Molecular Beam Epitaxy High Index Molecular-beam Epitaxy Vapor-phase Epitaxy Quantum Dots Islands Inp(001) Ingaas
Subject Area半导体化学
Indexed BySCI
Language英语
Date Available2010-08-12
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/12438
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorLi YF,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Recommended Citation
GB/T 7714
Li YF,Ye XL,Liu FQ,et al. Structural and optical characterization of InAs nanostructures grown on (001) and high index InP substrates[J]. APPLIED SURFACE SCIENCE,2000,167(3-4):191-196.
APA Li YF.,Ye XL.,Liu FQ.,Xu B.,Ding D.,...&Li YF,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China..(2000).Structural and optical characterization of InAs nanostructures grown on (001) and high index InP substrates.APPLIED SURFACE SCIENCE,167(3-4),191-196.
MLA Li YF,et al."Structural and optical characterization of InAs nanostructures grown on (001) and high index InP substrates".APPLIED SURFACE SCIENCE 167.3-4(2000):191-196.
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