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Mechanisms of the sidewall facet evolution in lateral epitaxial overgrowth of GaN by MOCVD 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2002, 卷号: 35, 期号: 21, 页码: 2731-2734
Authors:  Feng G;  Fu Y;  Xia JS;  Zhu JJ;  Zhang BS;  Shen XM;  Zhao DG;  Yang H;  Liang JW;  Feng G,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
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Vapor-phase Epitaxy  Deposition  Layers  Films  
Crystallographic tilt in GaN layers grown by epitaxial lateral overgrowth 期刊论文
SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY, 2002, 卷号: 45, 期号: 11, 页码: 1461-1467
Authors:  Feng G;  Zheng XH;  Zhu JJ;  Shen XM;  Zhang BS;  Zhao DG;  Sun YP;  Zhang ZH;  Wang YT;  Yang H;  Liang JW;  Feng G,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
Adobe PDF(225Kb)  |  Favorite  |  View/Download:917/290  |  Submit date:2010/08/12
Gan  Epitaxial Lateral Overgrowth  Crystallographic Tilt  Double Crystal X-ray Diffraction  Films  Defects  Gaas  
Thermal annealing behaviour of Ni/Au on n-GaN Schottky contacts 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2002, 卷号: 35, 期号: 20, 页码: 2648-2651
Authors:  Sun YP;  Shen XM;  Wang J;  Zhao DG;  Feng G;  Fu Y;  Zhang SM;  Zhang ZH;  Feng ZH;  Bai YX;  Yang H;  Sun YP,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
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Resistance Ohmic Contacts  Field-effect Transistor  Single-crystal Gan  Microwave Performance  Stability  Barrier  Diodes  
Investigation on the origin of crystallographic tilt in lateral epitaxial overgrown GaN using selective etching 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 240, 期号: 3-4, 页码: 368-372
Authors:  Feng G;  Zheng XH;  Fu Y;  Zhu JJ;  Shen XM;  Zhang BS;  Zhao DG;  Wang YT;  Yang H;  Liang JW;  Feng G,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
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X-ray Diffraction  Etching  Metalorganic Vapor-phase Epitaxy  Nitrides  Semiconducting Iii-v Materials  Light-emitting-diodes  Vapor-phase Epitaxy  Films  Dislocations  Density  Growth  Layers  
Wafer bonding technique used for the integration of cubic GaN/GaAs (001) with Si substrate 期刊论文
SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES, 2002, 卷号: 45, 期号: 3, 页码: 255-260
Authors:  Sun YP;  Fu Y;  Qu B;  Wang YT;  Feng ZH;  Shen XM;  Zhao DG;  Zheng XH;  Duan LH;  Li BC;  Zhang SM;  Yang H;  Sun YP,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China. 电子邮箱地址: ypsun@red.semi.ac.cn
Adobe PDF(721Kb)  |  Favorite  |  View/Download:1445/382  |  Submit date:2010/08/12
Wafer Bonding  Cubic  Gan/gaas(001)  Si-substrate  Light-emitting-diodes  P-type Gan  Resistance  Contact  Laser  
立方相 Al_xGa_(1-x)N/GaAs(100)的MOVCD外延生长 期刊论文
半导体学报, 2002, 卷号: 23, 期号: 2, 页码: 161-164
Authors:  冯志宏;  杨辉;  徐大鹏;  赵德刚;  王海;  段俐宏
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GaAs衬底生长的立方GaN晶片键合技术 期刊论文
中国科学. E辑,技术科学, 2002, 卷号: 32, 期号: 5, 页码: 584-589
Authors:  孙元平;  付羿;  渠波;  王玉田;  冯玉宏;  赵德刚;  郑新和;  段俐宏;  李秉臣;  张书明;  杨辉;  姜晓明;  郑文莉;  贾全杰
Adobe PDF(713Kb)  |  Favorite  |  View/Download:1116/355  |  Submit date:2010/11/23
GaN横向外延中晶面倾斜的形成机制 期刊论文
中国科学. A辑,数学, 2002, 卷号: 32, 期号: 8, 页码: 737-742
Authors:  冯淦;  郑新和;  朱建军;  沈晓明;  张宝顺;  赵德刚;  孙元平;  张泽洪;  王玉田;  杨辉;  梁骏吾
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GaN/GaAs(001)与GaN/Al_2O_3(0001)外延层光辅助湿法腐蚀行为的比较 期刊论文
半导体学报, 2002, 卷号: 23, 期号: 8, 页码: 881-885
Authors:  沈晓明;  张秀兰;  孙元平;  赵德刚;  冯淦;  张宝顺;  张泽洪;  冯志宏;  杨辉
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GaAs吸收衬底生长的立方相GaN发光二极管的工艺设计与实现 期刊论文
半导体学报, 2002, 卷号: 23, 期号: 9, 页码: 1001-1005
Authors:  孙元平;  张泽洪;  赵德刚;  冯志宏;  付羿;  张书明;  杨辉
Adobe PDF(227Kb)  |  Favorite  |  View/Download:1230/367  |  Submit date:2010/11/23