SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Crystallographic tilt in GaN layers grown by epitaxial lateral overgrowth
Feng G; Zheng XH; Zhu JJ; Shen XM; Zhang BS; Zhao DG; Sun YP; Zhang ZH; Wang YT; Yang H; Liang JW; Feng G,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
2002
Source PublicationSCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY
ISSN1006-9283
Volume45Issue:11Pages:1461-1467
AbstractThe crystallographic tilt in GaN layers grown by epitaxial lateral overgrowth (ELO) on sapphire (0001) substrates was investigated by using double crystal X-ray diffraction (DC-XRD). It was found that ELO GaN stripes bent towards the SiNx mask in the direction perpendicular to seeding lines. Each side of GaN (0002) peak in DC-XRD rocking curves was a broad peak related with the crystallographic tilt. This broad peak split into two peaks (denoted as A and B), and peak B disappeared gradually when the mask began to be removed by selective etching. Only narrow peak A remained when the SiNx mask was removed completely. A model based on these results has been developed to show that there are two factors responsible for the crystallographic tilt: One is the non-uniformity elastic deformation caused by the interphase force between the ELO GaN layer and the SiNx mask. The other is the plastic deformation, which is attributed to the change of the threading dislocations (TDs)-from vertical in the window regions to the lateral in the regions over the mask.
metadata_83chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
KeywordGan Epitaxial Lateral Overgrowth Crystallographic Tilt Double Crystal X-ray Diffraction Films Defects Gaas
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2010-08-12
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/11738
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorFeng G,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
Recommended Citation
GB/T 7714
Feng G,Zheng XH,Zhu JJ,et al. Crystallographic tilt in GaN layers grown by epitaxial lateral overgrowth[J]. SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY,2002,45(11):1461-1467.
APA Feng G.,Zheng XH.,Zhu JJ.,Shen XM.,Zhang BS.,...&Feng G,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China..(2002).Crystallographic tilt in GaN layers grown by epitaxial lateral overgrowth.SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY,45(11),1461-1467.
MLA Feng G,et al."Crystallographic tilt in GaN layers grown by epitaxial lateral overgrowth".SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY 45.11(2002):1461-1467.
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