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Effect of an indium-doped barrier on enhanced near-ultraviolet emission from InGaN/AlGaN: In multiple quantum wells grown on Si(111) 期刊论文
NANOTECHNOLOGY, 2007, 卷号: 18, 期号: 1, 页码: Art.No.015402
Authors:  Wu JJ (Wu Jiejun);  Zhang GY (Zhang Guoyi);  Liu XL (Liu Xianglin);  Zhu QS (Zhu Qinsheng);  Wang ZG (Wang Zhanguo);  Jia QJ (Jia Quanjie);  Guo LP (Guo Liping);  Wu, JJ, Peking Univ, Res Ctr Wide Gap Semicond, State Key Lab Artificial Microstruct & Mesoscop, Sch Phys, Beijing 100871, Peoples R China. 电子邮箱地址: jiejunw@red.semi.ac.cn
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Chemical-vapor-deposition  
Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition 期刊论文
OPTICAL MATERIALS, 2006, 卷号: 28, 期号: 10, 页码: 1227-1231
Authors:  Wu JJ (Wu Jiejun);  Han XX (Han Xiuxun);  Li JM (Li Jiemin);  Wei HY (Wei Hongyuan);  Cong GW (Cong Guangwei);  Liu XL (Liu Xianglin);  Zhu QS (Zhu Qinsheng);  Wang ZG (Wang Zhanguo);  Jia QJ (Jia Quanjie);  Guo LP (Guo Liping);  Hu TD (Hu Tiandou);  Wang HH (Wang Huanhua);  Wu, JJ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: jiejunw@red.semi.ac.cn
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In dopIng  Cracks  Si(111) Substrate  Lt-algan Interlayer  Metalorganic Chemical Vapor Deposition  Gan  Phase Epitaxy  Indium-surfactant  Optical-properties  Si(111)  Stress  Films  
Twinning in Low-Temperature MOCVD Grown GaN on (001) GaAs Substrate 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 4, 页码: 645-650
Authors:  Shen Xiaoming;  Wang Yutian;  Wang Jianfeng;  Liu Jianping;  Zhang Jicai;  Guo Liping;  Jia Quanjie;  Jiang Xiaoming;  Hu Zhengfei;  Yang Hui;  Liang Junwu
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GaAs衬底生长的立方GaN晶片键合技术 期刊论文
中国科学. E辑,技术科学, 2002, 卷号: 32, 期号: 5, 页码: 584-589
Authors:  孙元平;  付羿;  渠波;  王玉田;  冯玉宏;  赵德刚;  郑新和;  段俐宏;  李秉臣;  张书明;  杨辉;  姜晓明;  郑文莉;  贾全杰
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横向外延GaN结晶质量的同步辐射研究 期刊论文
核技术, 2002, 卷号: 25, 期号: 10, 页码: 770-774
Authors:  冯淦;  郑新和;  王玉田;  杨辉;  梁骏吾;  郑文莉;  贾全杰
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