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Back-illuminated 283 nm AlGaN solar-blind ultraviolet p-i-n photodetector 期刊论文
Infrared and Laser Engineering, 2013, 卷号: 42, 期号: 4, 页码: 1011-1014
Authors:  Wang, Xiaoyong;  Chong, Ming;  Zhao, Degang;  Su, Yanmei
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Conduction Band Offset of InGaN/AlInGaN Quantum Wells Studied by Deep Level Transient Spectroscopic Technique 期刊论文
APPLIED PHYSICS EXPRESS, 2012, 卷号: 5, 期号: 9, 页码: 091001
Authors:  Lu LW (Lu, Liwu);  Su SC (Su, Shichen);  Ling CC (Ling, Chi-Chung);  Xu SJ (Xu, Shijie);  Zhao DG (Zhao, Degang);  Zhu JJ (Zhu, Jianjun);  Yang H (Yang, Hui);  Wang JN (Wang, Jiannong);  Gey WK (Gey, Weikun)
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结构参数对p-i-n结构InGaN太阳能电池性能的影响及机理 期刊论文
物理学报, 2012, 卷号: 61, 期号: 16, 页码: 168402-1-168402-6
Authors:  周梅,赵德刚
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p-GaN/p-Al_xGa_(1-x)N异质结界面处二维空穴气的性质及其对欧姆接触的影响 期刊论文
物理学报, 2012, 卷号: 61, 期号: 21, 页码: 217302-1-217302-6
Authors:  王晓勇,种明,赵德刚,苏艳梅
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Fabrication of246 nm back-illuminated AlGaN solar-blind ultraviolet p-i-n photodetector 期刊论文
Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2011, 卷号: 40, 期号: 1, 页码: 32-35
Authors:  Yan, Tingjing;  Chong, Ming;  Zhao, Degang;  Zhang, Shuang;  Chen, Lianghui;  Yan, T.(tingjing.yan@gmail.com)
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Alloying  Fabrication  Gallium  Heterojunctions  Optoelectronic Devices  Pixels  
纳米折叠InGaN/GaN LED材料生长及器件特性 期刊论文
物理学报, 2011, 卷号: 60, 期号: 7, 页码: 076104-1-076104-4
Authors:  陈贵锋;  谭小动;  万尾甜;  沈俊;  郝秋艳;  唐成春;  朱建军;  刘宗顺;  赵德刚;  张书明
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246nm p-i-n型背照AlGaN太阳盲紫外探测器的研制 期刊论文
红外与激光工程, 2011, 卷号: 40, 期号: 1, 页码: 32-35
Authors:  颜廷静;  种明;  赵德刚;  张爽;  陈良惠
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一种测量p-GaN载流子浓度的方法 期刊论文
物理学报, 2011, 卷号: 60, 期号: 3, 页码: 721-728
Authors:  周梅;  赵德刚
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Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2011, 卷号: 509, 期号: 3, 页码: 748-750
Authors:  Deng Y;  Zhao DG;  Le LC;  Jiang DS;  Wu LL;  Zhu JJ;  Wang H;  Liu ZS;  Zhang SM;  Yang H;  Liang JW;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. dgzhao@red.semi.ac.cn
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Nitride Materials  Crystal Growth  Composition Fluctuations  X-ray Diffraction  Layer  
Light extraction efficiency improvement and strain relaxation in InGaN/GaN multiple quantum well nanopillars 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 8, 页码: Article no.84339
Authors:  Zhu JH;  Wang LJ;  Zhang SM;  Wang H;  Zhao DG;  Zhu JJ;  Liu ZS;  Jiang DS;  Yang H;  Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. smzhang@red.semi.ac.cn
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