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Growth of Cubic GaN by MOCVD at High Temperature 期刊论文
半导体学报, 2002, 卷号: 23, 期号: 2, 页码: 120-123
Authors:  Fu Yi;  Sun Yuanping;  Shen Xiaoming;  Li Shunfeng;  Feng Zhihong;  Duan Lihong;  Wang Hai;  Yang Hui
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用侧向外延生长法降低立方相GaN中的层错密度 期刊论文
半导体学报, 2002, 卷号: 23, 期号: 10, 页码: 1093-1097
Authors:  沈晓明;  付羿;  冯淦;  张宝顺;  冯志宏;  杨辉
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GaAs衬底生长的立方GaN晶片键合技术 期刊论文
中国科学. E辑,技术科学, 2002, 卷号: 32, 期号: 5, 页码: 584-589
Authors:  孙元平;  付羿;  渠波;  王玉田;  冯玉宏;  赵德刚;  郑新和;  段俐宏;  李秉臣;  张书明;  杨辉;  姜晓明;  郑文莉;  贾全杰
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Etching Behavior of GaN/GaAs(001) Epilayers Grown by MOVPE 期刊论文
半导体学报, 2002, 卷号: 23, 期号: 7, 页码: 707-712
Authors:  Shen Xiaoming;  Feng Zhihong;  Feng Gan;  Fu Yi;  Zhang Baoshun;  Sun Yuanping;  Zhang Zehong;  Yang Hui
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GaAs吸收衬底生长的立方相GaN发光二极管的工艺设计与实现 期刊论文
半导体学报, 2002, 卷号: 23, 期号: 9, 页码: 1001-1005
Authors:  孙元平;  张泽洪;  赵德刚;  冯志宏;  付羿;  张书明;  杨辉
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立方氮化镓MOCVD外延生长的研究 学位论文
, 北京: 中国科学院半导体研究所, 2001
Authors:  付羿
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