SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Lateral phase separation in AlGaN grown on GaN with a high-temperature AIN interlayer
Sun Q; Huang Y; Wang H; Chen J; Jin RQ; Zhang SM; Yang H; Jiang DS; Jahn U; Ploog KH; Sun, Q, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: qsun@red.semi.ac.cn
2005
Source PublicationAPPLIED PHYSICS LETTERS
ISSN0003-6951
Volume87Issue:12Pages:Art.No.121914
AbstractThe influences of a high-temperature (HT) AlN interlayer (IL) on the phase separation in crack-free AlGaN grown on GaN have been studied. The depth-dependent cathodoluminescence (CL) spectra indicate a relatively uniform Al distribution in the growth direction, but the monochromatic CL images and the CL spectra obtained by line scan measurements reveal a lateral phase separation in AlGaN grown on relatively thick HT-AlN ILs. Moreover, when increasing the thickness of HT-AlN IL, the domain-like distribution of the AlN mole fraction in AlGaN layers is significantly enhanced through a great reduction of the domain size. The morphology of mesa-like small islands separated by V trenches in the HT-AlN IL, and the grain template formed by the coalescence of these islands during the subsequent AlGaN lateral overgrowth, are attributed to be responsible for the formation of domain-like structures in the AlGaN layer. (c) 2005 American Institute of Physics.
metadata_83chinese acad sci, state key lab integrated optoelect, inst semicond, beijing 100083, peoples r china; chinese acad sci, state key lab superlattices & microstruct, inst semicond, beijing 100083, peoples r china; paul drude inst festkorperelekt, d-10117 berlin, germany
KeywordChemical-vapor-deposition
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2010-03-17
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/8530
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorSun, Q, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: qsun@red.semi.ac.cn
Recommended Citation
GB/T 7714
Sun Q,Huang Y,Wang H,et al. Lateral phase separation in AlGaN grown on GaN with a high-temperature AIN interlayer[J]. APPLIED PHYSICS LETTERS,2005,87(12):Art.No.121914.
APA Sun Q.,Huang Y.,Wang H.,Chen J.,Jin RQ.,...&Sun, Q, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: qsun@red.semi.ac.cn.(2005).Lateral phase separation in AlGaN grown on GaN with a high-temperature AIN interlayer.APPLIED PHYSICS LETTERS,87(12),Art.No.121914.
MLA Sun Q,et al."Lateral phase separation in AlGaN grown on GaN with a high-temperature AIN interlayer".APPLIED PHYSICS LETTERS 87.12(2005):Art.No.121914.
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