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Depth dependence of structural quality in InN grown by metalorganic chemical vapor deposition
Wang H; Huang Y; Sun Q; Chen J; Zhu JJ; Wang LL; Wang YT; Yang H; Wu MF; Qu YH; Jiang DS; Wang, H, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wangh@red.semi.ac.cn
2007
Source PublicationMATERIALS LETTERS
ISSNISSN: 0167-577X
Volume61Issue:2Pages:516-519
AbstractRutherford backscattering and channeling is combined with X-ray diffraction to study the depth dependence of crystalline quality in InN layers grown by metalorganic chemical vapor deposition on sapphire substrate. The poorest crystalline quality in InN layer is produced at the intermediate region over 100 nm away from the InN/sapphire interface. With increasing layer thickness the crystalline quality improves to a certain degree dependent on the growth temperature. The InN sample grown at 450 degrees C is found to be more homogeneous than the sample grown at 550 degrees C. The difference in the defect profile is explained by the temperature-dependent growth modes. The inhomogeneity of structural quality and related properties such as carrier concentration and strain field is possibly the reason to observe a high energy wing in PL spectrum of the InN sample grown at 550 degrees C. (c) 2006 Elsevier B.V All rights reserved.
metadata_83chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china; peking univ, sch phys, dept tech phys, beijing 100871, peoples r china; chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china
KeywordX-ray Diffraction
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2010-03-29
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/9708
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorWang, H, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wangh@red.semi.ac.cn
Recommended Citation
GB/T 7714
Wang H,Huang Y,Sun Q,et al. Depth dependence of structural quality in InN grown by metalorganic chemical vapor deposition[J]. MATERIALS LETTERS,2007,61(2):516-519.
APA Wang H.,Huang Y.,Sun Q.,Chen J.,Zhu JJ.,...&Wang, H, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wangh@red.semi.ac.cn.(2007).Depth dependence of structural quality in InN grown by metalorganic chemical vapor deposition.MATERIALS LETTERS,61(2),516-519.
MLA Wang H,et al."Depth dependence of structural quality in InN grown by metalorganic chemical vapor deposition".MATERIALS LETTERS 61.2(2007):516-519.
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