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In-plane optical anisotropy induced by asymmetrically delta-doping in (001) GaAs/AlGaAs quantum wells studied by reflectance difference spectroscopy 期刊论文
JOURNAL OF APPLIED PHYSICS, 2013, 卷号: 113, 期号: 8, 页码: 083504
Authors:  Yu, J. L.;  Chen, Y. H.;  Bo, X.;  Jiang, C. Y.;  Ye, X. L.;  Wu, S. J.;  Gao, H. S.
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Anomalous circular photogalvanic effect of the spin-polarized two-dimensional electron gas in Mg0.2Zn0.8O/ZnO heterostructures at room temperature 期刊论文
Applied Physics Letters, 2013, 卷号: 102, 期号: 19, 页码: 192405 - 192405-4
Authors:  J. X. Duan, N. Tang, J. D. Ye, F. H. Mei, K. L. Teo, Y. H. Chen, W. K. Ge, B. Shen
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In-plane optical anisotropy induced by asymmetrically δ-doping in (001) GaAs/AlGaAs quantum wells studied by reflectance difference spectroscopy 期刊论文
Journal of Applied Physics, 2013, 卷号: 113, 期号: 8, 页码: 083504- 083504-5
Authors:  J. L. Yu, Y. H. Chen, X. Bo, C. Y. Jiang, X. L. Ye, S. J. Wu, H. S. Gao
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Temperature dependent photoluminescence of an In(Ga)As/GaAs quantum dot system with different areal density 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2010, 卷号: 43, 期号: 29, 页码: Art. No. 295401
Authors:  Zhou XL (Zhou X. L.);  Chen YH (Chen Y. H.);  Liu JQ (Liu J. Q.);  Jia CH (Jia C. H.);  Zhou GY (Zhou G. Y.);  Ye XL (Ye X. L.);  Xu B (Xu Bo);  Wang ZG (Wang Z. G.)
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Carrier Relaxation  States  Superlattices  Confinement  Laser  
In-plane optical anisotropy in GaAsN/GaAs single-quantum well investigated by reflectance-difference spectroscopy 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 108, 期号: 1, 页码: Art. No. 013516
Authors:  Yu JL (Yu J. L.);  Chen YH (Chen Y. H.);  Ye XL (Ye X. L.);  Jiang CY (Jiang C. Y.);  Jia CH (Jia C. H.);  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: yhchen@semi.ac.cn
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Molecular-beam Epitaxy  Strain Relaxation  Growth Temperature  Interface  Alloys  Gaas  Heterostructures  Microstructure  Ganxas1-x  Nitrogen  
Characterization and analysis of two-dimensional GaAs-based photonic crystal nanocavities at room temperature 期刊论文
MICROELECTRONIC ENGINEERING, 2010, 卷号: 87, 期号: 10, 页码: 1834-1837
Authors:  Peng YS (Peng Y. S.);  Xu B (Xu B.);  Ye XL (Ye X. L.);  Niu JB (Niu J. B.);  Jia R (Jia R.);  Wang ZG (Wang Z. G.);  Peng, YS, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: cynthia@semi.ac.cn
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Photonic Crystal Nanocavities  Quantum Dots  Cavity Resonant Mode  Room Temperature  
Abnormal temperature dependent photoluminescence of self-assembled InAs/GaAs surface quantum dots with high areal density 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2010, 卷号: 42, 期号: 9, 页码: 2455-2459
Authors:  Zhou XL (Zhou X. L.);  Chen YH (Chen Y. H.);  Liu JQ (Liu J. Q.);  Xu B (Xu B.);  Ye XL (Ye X. L.);  Wang ZG (Wang Z. G.)
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Quantum Dots  Temperature Dependent  Photoluminescence  Surface Localized Centers  
Thermal lensing effect in ridge structure InGaN multiple quantum well laser diodes 期刊论文
JOURNAL OF APPLIED PHYSICS, 2006, 卷号: 100, 期号: 4, 页码: Art.No.046101
Authors:  Li DY (Li D. Y.);  Huang YZ (Huang Y. Z.);  Zhu JJ (Zhu J. J.);  Zhao DG (Zhao D. G.);  Liu ZS (Liu Z. S.);  Zhang SM (Zhang S. M.);  Ye XJ (Ye X. J.);  Chong M (Chong M.);  Chen LH (Chen L. H.);  Yang H (Yang H.);  Liang JW (Liang J. W.);  Li, DY, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect & Nanooptoelec, POB 912, Beijing 100083, Peoples R China. E-mail: dyli@red.semi.ac.cn
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Linewidth Enhancement Factor  Wave-guide Laser  Gan Substrate  Index  Temperature  Gain  
具有复合埋层的新型SIMON材料的制备 期刊论文
半导体学报, 2004, 卷号: 25, 期号: 7, 页码: 814-818
Authors:  易万兵;  陈猛;  张恩霞;  刘相华;  陈静;  董业民;  金波;  刘忠立;  王曦
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