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Al composition variations in AlGaN films grown on low-temperature GaN buffer layer by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2008, 卷号: 310, 期号: 24, 页码: 5266-5269
Authors:  Zhao DG;  Jiang DS;  Zhu JJ;  Liu ZS;  Zhang SM;  Yang H;  Jahn U;  Ploog KH;  Zhao DG Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn
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Cathodoluminescence  Mocvd  Algan  
Correlation between optical and structural properties of (Al,Ga)N layers grown by MOCVD 期刊论文
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2007, 卷号: 204, 期号: 1, 页码: 294-298
Authors:  Jahn U (Jahn Uwe);  Jiang DS (Jiang De-Sheng);  Ploog KH (Ploog Klaus H.);  Wang XL (Wang Xiaolan);  Zhao DG (Zha0 Degang);  Yang H (Yang, Hui);  Jahn, U, Paul Drude Inst Festkorperelekt, Hausvogteipl 5-7, D-10117 Berlin, Germany. 电子邮箱地址: ujahn@pdi-berlin.de
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Chemical-vapor-deposition  
Spatial distribution of deep level defects in crack-free AlGaN grown on GaN with a high-temperature AlN interlayer 期刊论文
JOURNAL OF APPLIED PHYSICS, 2006, 卷号: 100, 期号: 12, 页码: Art.No.123101
Authors:  Sun, Q (Sun, Q.);  Wang, H (Wang, H.);  Jiang, DS (Jiang, D. S.);  Jin, RQ (Jin, R. Q.);  Huang, Y (Huang, Y.);  Zhang, SM (Zhang, S. M.);  Yang, H (Yang, H.);  Jahn, U (Jahn, U.);  Ploog, KH (Ploog, K. H.);  Sun, Q, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: qsun@red.semi.ac.cn
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Light-emitting-diodes  
Measurement of threading dislocation densities in GaN by wet chemical etching 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 卷号: 21, 期号: 9, 页码: 1229-1235
Authors:  Chen J;  Wang JF;  Wang H;  Zhu JJ;  Zhang SM;  Zhao DG;  Jiang DS;  Yang H;  Jahn U;  Ploog KH;  Chen, J, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail: jchen@red.semi.ac.cn
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X-ray-diffraction  
Lateral phase separation in AlGaN grown on GaN with a high-temperature AIN interlayer 期刊论文
APPLIED PHYSICS LETTERS, 2005, 卷号: 87, 期号: 12, 页码: Art.No.121914
Authors:  Sun Q;  Huang Y;  Wang H;  Chen J;  Jin RQ;  Zhang SM;  Yang H;  Jiang DS;  Jahn U;  Ploog KH;  Sun, Q, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: qsun@red.semi.ac.cn
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Chemical-vapor-deposition  
Nonradiative recombination centers in Ga(As,N) and their annealing behavior studied by Raman spectroscopy 期刊论文
APPLIED PHYSICS LETTERS, 2004, 卷号: 84, 期号: 11, 页码: 1859-1861
Authors:  Ramsteiner M;  Jiang DS;  Harris JS;  Ploog KH;  Ramsteiner, M, Paul Drude Inst Festkorperelekt, Hausvogteipl 5-7, D-10117 Berlin, Germany. 电子邮箱地址: mer@pdi-berlin.de
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1.3 Mu-m  
Investigations on V-defects in quaternary AlInGaN epilayers 期刊论文
APPLIED PHYSICS LETTERS, 2004, 卷号: 84, 期号: 26, 页码: 5449-5451
Authors:  Liu JP;  Wang YT;  Yang H;  Jiang DS;  Jahn U;  Ploog KH;  Liu, JP, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: jpliu@red.semi.ac.cn
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Multiple-quantum Wells  
Self-limiting MBE growth and characterization of three-dimensionally confined nanostructures on patterned GaAs(311)A substrates 期刊论文
JOURNAL OF ELECTRONIC MATERIALS, 1999, 卷号: 28, 期号: 1, 页码: 1-5
Authors:  Niu ZC;  Notzel R;  Jahn U;  Schonherr HP;  Fricke J;  Ploog KH;  Niu ZC,Paul Drude Inst Festkorperelekt,Hausvogteipl 5-7,D-10117 Berlin,Germany.
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High-index Substrates  Molecular Beam Epitaxy (Mbe)  Patterned Growth  Sidewall Quantum Wires  Three-dimensionally Confined Nanostructures  Gaas  Molecular-beam Epitaxy  Photoluminescence  Dots  
Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate 会议论文
COMPOUND SEMICONDUCTORS 1997, 156, SAN DIEGO, CALIFORNIA, SEP 08-11, 1997
Authors:  Jiang DS;  Ramsteiner M;  Brandt O;  Ploog KH;  Tews H;  Graber A;  Averbeck R;  Riechert H;  Jiang DS Paul Drude Inst Solid State Elect D-10117 Berlin Germany.
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Shallow Donors  
Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate 期刊论文
COMPOUND SEMICONDUCTORS 1997, 1998, 卷号: 156, 期号: 0, 页码: 211-214
Authors:  Jiang DS;  Ramsteiner M;  Brandt O;  Ploog KH;  Tews H;  Graber A;  Averbeck R;  Riechert H;  Jiang DS,Paul Drude Inst Solid State Elect,D-10117 Berlin,Germany.
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Shallow Donors