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Effect of polarization on intersubband transition in AlGaN/GaN multiple quantum wells 期刊论文
Applied Physics Letters, 2013, 卷号: 102, 期号: 19, 页码: 192109 - 192109-5
Authors:  G. Chen, Z. L. Li, X. Q. Wang, C. C. Huang, X. Rong, L. W. Sang, F. J. Xu, N. Tang, Z. X. Qin, M. Sumiya, Y. H. Chen, W. K. Ge, B. Shen
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The effect of an electric field on the nonlinear response of InAs/GaAs quantum dots 期刊论文
JOURNAL OF OPTICS, 2010, 卷号: 12, 期号: 5, 页码: Art. No. 055203
Authors:  Huang X (Huang X.);  Zhang XH (Zhang X. H.);  Zhu YG (Zhu Y. G.);  Li T (Li T.);  Han LF (Han L. F.);  Shang XJ (Shang X. J.);  Ni HQ (Ni H. Q.);  Niu ZC (Niu Z. C.);  Zhang, XH, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xinhuiz@semi.ac.cn
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Inas Quantum Dots  Nonlinear Refraction  Reflection Z-scan  Dc Electric Field Effect  Electrooptic Properties  Saturable Absorber  Optical-properties  Well Structures  Single-beam  Band-gap  Electroabsorption  Absorption  Reflection  Dependence  
Fermi-Level Pinning at Metal/High-k Interface Influenced by Electron State Density of Metal Gate 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2010, 卷号: 31, 期号: 10, 页码: 1101-1103
Authors:  Yang ZC (Yang Z. C.);  Huang AP (Huang A. P.);  Zheng XH (Zheng X. H.);  Xiao ZS (Xiao Z. S.);  Liu XY (Liu X. Y.);  Zhang XW (Zhang X. W.);  Chu PK (Chu Paul K.);  Wang WW (Wang W. W.);  Yang, ZC, BeihangUniv, DeptPhys, Beijing 100191, Peoples R China. 电子邮箱地址: aphuang@buaa.edu.cn
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Electron State Density  Fermi-level Pinning (Flp)  Mis Structures  Work Function (Wf)  Work Function  
Evaluation of thermal radiation dependent performance of GaSb thermophotovoltaic cell based on an analytical absorption coefficient model 期刊论文
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2010, 卷号: 94, 期号: 10, 页码: 1704-1710
Authors:  Wang Y (Wang Y.);  Chen NF (Chen N. F.);  Zhang XW (Zhang X. W.);  Huang TM (Huang T. M.);  Yin ZG (Yin Z. G.);  Wang YS (Wang Y. S.);  Zhang H (Zhang H.)
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Thermophotovoltaic  Gallium Antimonide  Absorption Coefficient  
Evaluating 0.53 eVGaInAsSbthermophotovoltaic diode based on an analytical absorption model 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2010, 卷号: 25, 期号: 9, 页码: Art. No. 095002
Authors:  Wang Y (Wang Y.);  Chen NF (Chen N. F.);  Zhang XW (Zhang X. W.);  Huang TM (Huang T. M.);  Yin ZG (Yin Z. G.);  Bai YM (Bai Y. M.)
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Optical Dielectric Function  Dispersion-relations  Carrier Mobilities  Phase Epitaxy  Doped Gaas  Devices  Gasb  Inp  Alxga1-xas  Ingaassb  
Two-port InGaAsP/InP square resonator microlasers 期刊论文
ELECTRONICS LETTERS, 2010, 卷号: 46, 期号: 8, 页码: 585-U62
Authors:  Che KJ (Che K. -J.);  Lin JD (Lin J. -D.);  Huang YZ (Huang Y. -Z.);  Yang YD (Yang Y. -D.);  Du Y (Du Y.);  Che, KJ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: yzhuang@semi.ac.cn
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Modes  
Exciton spin splitting in ultrathin InAs layers 期刊论文
APPLIED PHYSICS LETTERS, 2007, 卷号: 90, 期号: 7, 页码: Art.No.071907
Authors:  Sun, Z (Sun, Zheng);  Xu, ZY (Xu, Z. Y.);  Ji, Y (Ji, Yang);  Sun, BQ (Sun, B. Q.);  Wang, BR (Wang, B. R.);  Huang, SS (Huang, S. S.);  Ni, HQ (Ni, H. Q.);  Sun, Z, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址: zyxu@red.semi.ac.cn
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Gaas Quantum-wells  
Weak antilocalization and beating pattern in an InGaAs/InAlAs quantum well 期刊论文
SOLID STATE COMMUNICATIONS, 2007, 卷号: 143, 期号: 6-7, 页码: 300-303
Authors:  Zhou, WZ (Zhou, W. Z.);  Lin, T (Lin, T.);  Shang, LY (Shang, L. Y.);  Yu, G (Yu, G.);  Huang, ZM (Huang, Z. M.);  Guo, SL (Guo, S. L.);  Gui, YS (Gui, Y. S.);  Dai, N (Dai, N.);  Chu, JH (Chu, J. H.);  Cui, LJ (Cui, L. J.);  Li, DL (Li, D. L.);  Gao, HL (Gao, H. L.);  Zeng, YP (Zeng, Y. P.);  Chu, JH, Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China. 电子邮箱地址: jhchu@mail.sitp.ac.cn
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Quantum Well  
Optimization of GaInNAs(Sb)/GaAs quantum wells at 1.3-1.55 mu m grown by molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 301, 期号: 0, 页码: 125-128
Authors:  Ni, HQ (Ni, H. Q.);  Niu, ZC (Niu, Z. C.);  Fang, ZD (Fang, Z. D.);  Huang, SS (Huang, S. S.);  Zhang, SY (Zhang, S. Y.);  Wu, DH (Wu, D. H.);  Shun, Z (Shun, Z.);  Han, Q (Han, Q.);  Wu, RH (Wu, R. H.);  Ni, HQ, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: nihq@red.semi.ac.cn
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Quantum Wells  
Thermal lensing effect in ridge structure InGaN multiple quantum well laser diodes 期刊论文
JOURNAL OF APPLIED PHYSICS, 2006, 卷号: 100, 期号: 4, 页码: Art.No.046101
Authors:  Li DY (Li D. Y.);  Huang YZ (Huang Y. Z.);  Zhu JJ (Zhu J. J.);  Zhao DG (Zhao D. G.);  Liu ZS (Liu Z. S.);  Zhang SM (Zhang S. M.);  Ye XJ (Ye X. J.);  Chong M (Chong M.);  Chen LH (Chen L. H.);  Yang H (Yang H.);  Liang JW (Liang J. W.);  Li, DY, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect & Nanooptoelec, POB 912, Beijing 100083, Peoples R China. E-mail: dyli@red.semi.ac.cn
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Linewidth Enhancement Factor  Wave-guide Laser  Gan Substrate  Index  Temperature  Gain