SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Thermal lensing effect in ridge structure InGaN multiple quantum well laser diodes
Li DY (Li D. Y.); Huang YZ (Huang Y. Z.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Liu ZS (Liu Z. S.); Zhang SM (Zhang S. M.); Ye XJ (Ye X. J.); Chong M (Chong M.); Chen LH (Chen L. H.); Yang H (Yang H.); Liang JW (Liang J. W.); Li, DY, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect & Nanooptoelec, POB 912, Beijing 100083, Peoples R China. E-mail: dyli@red.semi.ac.cn
2006
Source PublicationJOURNAL OF APPLIED PHYSICS
ISSN0021-8979
Volume100Issue:4Pages:Art.No.046101
AbstractTime-resolved light-current curves, spectra, and far-field distributions of ridge structure InGaN multiple quantum well laser diodes grown on sapphire substrate are measured with a temporal resolution of 0.1 ns under a pulsed current condition. Results show that the thermal lensing effect clearly improves the confinement of the higher order modes. The thermal lens leads to a lower threshold current for the higher order modes, a higher slope efficiency, and a change in the lasing mode of the device. The threshold current for the higher modes decreases by about 5 mA in every 10 ns in a pulse, and the slope efficiency increases by 7.5 times on the average when higher modes lase. (c) 2006 American Institute of Physics.
metadata_83chinese acad sci, inst semicond, state key lab integrated optoelect & nanooptoelec, beijing 100083, peoples r china
KeywordLinewidth Enhancement Factor Wave-guide Laser Gan Substrate Index Temperature Gain
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2010-04-11
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/10416
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorLi, DY, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect & Nanooptoelec, POB 912, Beijing 100083, Peoples R China. E-mail: dyli@red.semi.ac.cn
Recommended Citation
GB/T 7714
Li DY ,Huang YZ ,Zhu JJ ,et al. Thermal lensing effect in ridge structure InGaN multiple quantum well laser diodes[J]. JOURNAL OF APPLIED PHYSICS,2006,100(4):Art.No.046101.
APA Li DY .,Huang YZ .,Zhu JJ .,Zhao DG .,Liu ZS .,...&Li, DY, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect & Nanooptoelec, POB 912, Beijing 100083, Peoples R China. E-mail: dyli@red.semi.ac.cn.(2006).Thermal lensing effect in ridge structure InGaN multiple quantum well laser diodes.JOURNAL OF APPLIED PHYSICS,100(4),Art.No.046101.
MLA Li DY ,et al."Thermal lensing effect in ridge structure InGaN multiple quantum well laser diodes".JOURNAL OF APPLIED PHYSICS 100.4(2006):Art.No.046101.
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