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High-temperature AlN interlayer for crack-free AlGaN growth on GaN 期刊论文
JOURNAL OF APPLIED PHYSICS, 2008, 卷号: 104, 期号: 4, 页码: Art. No. 043516
Authors:  Sun, Q;  Wang, JT;  Wang, H;  Jin, RQ;  Jiang, DS;  Zhu, JJ;  Zhao, DG;  Yang, H;  Zhou, SQ;  Wu, MF;  Smeets, D;  Vantomme, A;  Sun, Q, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: sunqian519@gmail.com
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Stress  Si(111)  Reduction  Thickness  
Valence band offset of ZnO/GaAs heterojunction measured by x-ray photoelectron spectroscopy 期刊论文
APPLIED PHYSICS LETTERS, 2008, 卷号: 92, 期号: 1, 页码: Art. No. 012104
Authors:  Zhang, PF;  Liu, XL;  Zhang, RQ;  Fan, HB;  Yang, AL;  Wei, HY;  Jin, P;  Yang, SY;  Zhu, QS;  Wang, ZG;  Zhang, PF, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhangpanf@semi.ac.cn;  xlliu@semi.ac.cn
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Spatial distribution of deep level defects in crack-free AlGaN grown on GaN with a high-temperature AlN interlayer 期刊论文
JOURNAL OF APPLIED PHYSICS, 2006, 卷号: 100, 期号: 12, 页码: Art.No.123101
Authors:  Sun, Q (Sun, Q.);  Wang, H (Wang, H.);  Jiang, DS (Jiang, D. S.);  Jin, RQ (Jin, R. Q.);  Huang, Y (Huang, Y.);  Zhang, SM (Zhang, S. M.);  Yang, H (Yang, H.);  Jahn, U (Jahn, U.);  Ploog, KH (Ploog, K. H.);  Sun, Q, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: qsun@red.semi.ac.cn
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Light-emitting-diodes  
Depth dependent elastic strain in ZnO epilayer: combined Rutherford backscattering/channeling and X-ray diffraction 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2005, 卷号: 229, 期号: 2, 页码: 246-252
Authors:  Feng ZX;  Yao SD;  Hou L;  Jin RQ;  Feng, ZX, McGill Univ, Dept Phys, 3600 Univ St,Rutherford Bldg, Montreal, PQ H3A 2T8, Canada. 电子邮箱地址: fengz@physics.mcgill.ca
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Rutherford Backscattering/channeling  
Influence of dislocations on photoluminescence of InGaN/GaN multiple quantum wells 期刊论文
APPLIED PHYSICS LETTERS, 2005, 卷号: 87, 期号: 7, 页码: Art.No.071908
Authors:  Zhang JC;  Jiang DS;  Sun Q;  Wang JF;  Wang YT;  Liu JP;  Chen J;  Jin RQ;  Zhu JJ;  Yang H;  Dai T;  Jia QJ;  Zhang, JC, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: jczhang@red.semi.ac.cn
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X-ray-diffraction  
Lateral phase separation in AlGaN grown on GaN with a high-temperature AIN interlayer 期刊论文
APPLIED PHYSICS LETTERS, 2005, 卷号: 87, 期号: 12, 页码: Art.No.121914
Authors:  Sun Q;  Huang Y;  Wang H;  Chen J;  Jin RQ;  Zhang SM;  Yang H;  Jiang DS;  Jahn U;  Ploog KH;  Sun, Q, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: qsun@red.semi.ac.cn
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Chemical-vapor-deposition  
Effect of the N/Al ratio of AlN buffer on the crystal properties and stress state of GaN film grown on Si(111) substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 260, 期号: 3-4, 页码: 331-335
Authors:  Wu M;  Zhang BS;  Chen J;  Liu JP;  Shen XM;  Zhao DG;  Zhang JC;  Wang JF;  Li N;  Jin RQ;  Zhu JJ;  Yang H;  Wu, M, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
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Full-width At Half-maximum  
Structural and optical properties of quaternary AlInGaN epilayers grown by MOCVD with various TMGa flows 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 260, 期号: 3-4, 页码: 388-393
Authors:  Liu JP;  Zhang BS;  Wu M;  Li DB;  Zhang JC;  Jin RQ;  Zhu JJ;  Chen J;  Wang JF;  Wang YT;  Yang H;  Liu, JP, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
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Triple-axis X-ray Diffraction  
A study of the degree of relaxation of AlGaN epilayers on GaN template 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 270, 期号: 3-4, 页码: 289-294
Authors:  Zhang JC;  Wu MF;  Wang JF;  Liu JP;  Wang YT;  Chen J;  Jin RQ;  Yang H;  Zhang, JC, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: jczhang@red.semi.ac.cn
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High Resolution X-ray Diffraction  
Growth of crack-free AlGaN film on thin AlN interlayer by MOCVD 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 268, 期号: 1-2, 页码: 35-40
Authors:  Jin RQ;  Liu JP;  Zhang JC;  Yang H;  Jin, RQ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: rqjin@red.semi.ac.cn
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Crystal Morphology