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Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold 期刊论文
Applied Optics, 2017, 卷号: 56, 期号: 9, 页码: 2462-2466
Authors:  X. LI;  Z. S. LIU;  D. G. ZHAO;  D. S. JIANG;  P. CHEN;  J. J. ZHU;  J. YANG;  W. LIU;  X. G. HE;  X. J. LI;  F. LIANG;  S. T. LIU;  Y. XING;  L. Q. ZHANG;  M. LI;  J. ZHANG
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Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文
Applied Physics A, 2016, 卷号: 122, 期号: 9
Authors:  F. Liang;  P. Chen;  D. G. Zhao;  D. S. Jiang;  Z. J. Zhao;  Z. S. Liu;  J. J. Zhu;  J. Yang;  W. Liu;  X. G. He;  X. J. Li;  X. Li;  S. T. Liu;  H. Yang;  J. P. Liu;  L. Q. Zhang;  Y. T. Zhang;  G. T. Du
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XPS study of impurities in Si-doped AlN film 期刊论文
Surface and Interface Analysis, 2016, 卷号: 48, 期号: 12, 页码: 1305–1309
Authors:  F. Liang;  P. Chen;  D. G. Zhao;  D. S. Jiang;  Z. J. Zhao;  Z. S. Liu;  J. J. Zhu;  J. Yang;  L. C. Le;  W. Liu;  X.G. He;  X. J. Li;  X Li;  S. T Liu;  H. Yang;  J. P. Liu;  L. Q. Zhang;  Y. T. Zhang;  G. T. Du
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The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes 期刊论文
AIP ADVANCES, 2016, 卷号: 6, 页码: 035124
Authors:  P. Chen;  D. G. Zhao;  D. S. Jiang;  J. J. Zhu;  Z. S. Liu;  J. Yang;  X. Li;  L. C. Le;  X. G. He;  W. Liu;  X. J. Li;  F. Liang;  B. S. Zhang;  H. Yang;  Y. T. Zhang;  G. T. Du
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Effects of Si-doping on field emission characteristics of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文
Materials Technology, 2016
Authors:  F. Liang;  P. Chen;  D. G. Zhao;  D. S. Jiang;  Z. S. Liu;  J. J. Zhu;  J. Yang;  W. Liu;  X. Li;  S. T. Liu;  H. Yang;  L. Q. Zhang;  J. P. Liu;  Y. T. Zhang;  G. T. Du
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Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes 期刊论文
Optics Express, 2016, 卷号: 24, 期号: 13, 页码: 13824-13831
Authors:  J. Yang;  D. G. Zhao;  D. S. Jiang;  P. Chen;  Z. S. Liu;  J. J. Zhu;  X. J. Li;  X. G. He;  J. P. Liu;  L. Q. Zhang;  H. Yang;  Y. T. Zhang;  G. T. Du
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Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness 期刊论文
JOURNAL OF APPLIED PHYSICS, 2015, 卷号: 117, 页码: 055709
Authors:  J. Yang;  D. G. Zhao;  D. S. Jiang;  P. Chen;  J. J. Zhu;  Z. S. Liu;  L. C. Le;  X. J. Li;  X. G. He;  J. P. Liu;  H. Yang;  Y. T. Zhang;  G. T. Du
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Temperature dependence of photoluminescence spectra for green ligh emission from InGaN/GaN multiple wells 期刊论文
OPTICS EXPRESS, 2015, 卷号: 23, 期号: 12, 页码: 15935
Authors:  W. Liu;  D. G. Zhao;  D. S. Jiang;  P. Chen;  Z. S. Liu;  J. J. Zhu;  M. Shi;  D. M.Zhao;  X. Li;  J. P. Liu;  S. M. Zhang;  H. Wang;  H. Yang;  Y. T. Zhang;  G. T.Du
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High efficient GaN-based laser diodes with tunnel junction 期刊论文
Applied Physics Letters, 2013, 卷号: 103, 期号: 4, 页码: 043508
Authors:  M. X. Feng, J. P. Liu, S. M. Zhang, D. S. Jiang, Z. C. Li, K. Zhou, D. Y. Li, L. Q. Zhang, F. Wang, H. Wang, P. Chen, Z. S. Liu, D. G. Zhao, Q. Sun, H. Yang
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Topological insulator-graphene junction for spin transport 期刊论文
APPLIED PHYSICS LETTERS, 2013, 卷号: 101, 期号: 24, 页码: 243102
Authors:  Li, H.;  Zhang, H. B.;  Shao, J. M.;  Zhang, Y. Y.;  Yao, D. X.;  Yang, G. W.
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