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Correlation between the structural and cathodoluminescence properties in InGaN/GaN multiple quantum wells with large number of quantum wells 期刊论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2014, 卷号: 32, 期号: 5, 页码: 051503
Authors:  Yang, J;  Zhao, DG;  Jiang, DS;  Jahn, U;  Chen, P;  Zhu, JJ;  Liu, ZS;  Le, LC;  He, XG;  Li, XJ;  Wang, H;  Yang, H
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Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer 期刊论文
THIN SOLID FILMS, 2010, 卷号: 518, 期号: 17, 页码: 5028-5031
Authors:  Wang H (Wang H.);  Jiang DS (Jiang D. S.);  Jahn U (Jahn U.);  Zhu JJ (Zhu J. J.);  Zhao DG (Zhao D. G.);  Liu ZS (Liu Z. S.);  Zhang SM (Zhang S. M.);  Yang H (Yang H.);  Wang, H, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wangh@semi.ac.cn
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Gallium Nitride  Indium Gallium Nitride  Cathodeluminescence  X-ray Diffraction  Metal-organic Chemical Vapor Deposition  
Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties 期刊论文
PHYSICA B-CONDENSED MATTER, 2010, 卷号: 405, 期号: 22, 页码: 4668-4672
Authors:  Wang H (Wang H.);  Jiang DS (Jiang D. S.);  Jahn U (Jahn U.);  Zhu JJ (Zhu J. J.);  Zhao DG (Zhao D. G.);  Liu ZS (Liu Z. S.);  Zhang SM (Zhang S. M.);  Qiu YX (Qiu Y. X.);  Yang H (Yang H.);  Wang, H, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wangh@semi.ac.cn
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Ingan  Dislocation  Metalorganic Chemical Vapor Deposition  High Resolution X-ray Diffraction  Cathodoluminescence  Misfit Dislocations  Quantum-wells  Band-gap  Epilayers  Generation  Alloys  Inn  
Carrier capture by threading dislocations in (In,Ga)N/GaN heteroepitaxial layers 期刊论文
PHYSICAL REVIEW B, 2010, 卷号: 81, 期号: 12, 页码: Art. No. 125314
Authors:  Jahn U;  Brandt O;  Luna E;  Sun X;  Wang H;  Jiang DS;  Bian LF;  Yang;  H;  Jahn, U, Paul Drude Inst Festkorperelekt, Hausvogteipl 5-7, D-10117 Berlin, Germany. 电子邮箱地址: ujahn@pdi-berlin.de
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Gan  Alloys  
Cathodoluminescence study of GaN-based film structures 期刊论文
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2008, 卷号: 19, 页码: S58-S63 Suppl. 1
Authors:  Jiang DS;  Jahn U;  Chen J;  Li DY;  Zhang SM;  Zhu JJ;  Zhao DG;  Liu ZS;  Yang H;  Ploog K;  Jiang, DS, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
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Al composition variations in AlGaN films grown on low-temperature GaN buffer layer by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2008, 卷号: 310, 期号: 24, 页码: 5266-5269
Authors:  Zhao DG;  Jiang DS;  Zhu JJ;  Liu ZS;  Zhang SM;  Yang H;  Jahn U;  Ploog KH;  Zhao DG Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn
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Cathodoluminescence  Mocvd  Algan  
Correlation between optical and structural properties of (Al,Ga)N layers grown by MOCVD 期刊论文
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2007, 卷号: 204, 期号: 1, 页码: 294-298
Authors:  Jahn U (Jahn Uwe);  Jiang DS (Jiang De-Sheng);  Ploog KH (Ploog Klaus H.);  Wang XL (Wang Xiaolan);  Zhao DG (Zha0 Degang);  Yang H (Yang, Hui);  Jahn, U, Paul Drude Inst Festkorperelekt, Hausvogteipl 5-7, D-10117 Berlin, Germany. 电子邮箱地址: ujahn@pdi-berlin.de
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Chemical-vapor-deposition  
The effects of LT AlN buffer thickness on the optical properties of AlGaN grown by MOCVD and Al composition inhomogeneity analysis 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 卷号: 40, 期号: 4, 页码: 1113-1117
Authors:  Wang, XL (Wang, X. L.);  Zhao, DG (Zhao, D. G.);  Jahn, U (Jahn, U.);  Ploog, K (Ploog, K.);  Jiang, DS (Jiang, D. S.);  Yang, H (Yang, H.);  Liang, JW (Liang, J. W.);  Wang, XL, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: WXL@mail.semi.ac.cn
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Photodiodes  
Al compositional inhomogeneity of AlGaN epilayer with a high Al composition grown by metal-organic chemical vapour deposition 期刊论文
JOURNAL OF PHYSICS-CONDENSED MATTER, 2007, 卷号: 19, 期号: 17, 页码: Art.No.176005
Authors:  Wang XL;  Zhao DG;  Jiang DS;  Yang H;  Liang JW;  Jahn U;  Ploog K;  Wang, XL, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: WXL@mail.semi.ac.cn
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Sapphire  
Spatial distribution of deep level defects in crack-free AlGaN grown on GaN with a high-temperature AlN interlayer 期刊论文
JOURNAL OF APPLIED PHYSICS, 2006, 卷号: 100, 期号: 12, 页码: Art.No.123101
Authors:  Sun, Q (Sun, Q.);  Wang, H (Wang, H.);  Jiang, DS (Jiang, D. S.);  Jin, RQ (Jin, R. Q.);  Huang, Y (Huang, Y.);  Zhang, SM (Zhang, S. M.);  Yang, H (Yang, H.);  Jahn, U (Jahn, U.);  Ploog, KH (Ploog, K. H.);  Sun, Q, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: qsun@red.semi.ac.cn
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Light-emitting-diodes