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DCXRD Investigation of a Ge/Si(001) Island Multilayer Structure
Shi Wenhua; Xue Chunlai; Luo Liping; Wang Qiming
2007
Source Publication半导体学报
Volume28Issue:2Pages:145-148
AbstractA Ge/Si(001) island multilayer structure is investigated by double crystal X-ray diffraction, transmission electron microscopy,and atomic force microscopy. We fit the satellite peaks in the rocking curve by two Lorentz lineshapes, which originate from the wetting layer region and the island region. Then from the ratio of the thick- nesses of the Si and Ge (GeSi) layers as determined by TEM,tbe Ge compositions of the wetting layer and islands are estimated to be about 0. 51 and 0. 67, respectively,according to the positions of the fitted peaks. This proves to be a relatively simple way to investigate the Ge/Si (001) island multilayer structure.
metadata_83Institute of Semiconductors,Chinese Academy of Sciences
Subject Area光电子学
Funding Organization国家重点基础研究发展规划,国家自然科学基金
Indexed ByCSCD
Language英语
CSCD IDCSCD:2759756
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16361
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Shi Wenhua,Xue Chunlai,Luo Liping,等. DCXRD Investigation of a Ge/Si(001) Island Multilayer Structure[J]. 半导体学报,2007,28(2):145-148.
APA Shi Wenhua,Xue Chunlai,Luo Liping,&Wang Qiming.(2007).DCXRD Investigation of a Ge/Si(001) Island Multilayer Structure.半导体学报,28(2),145-148.
MLA Shi Wenhua,et al."DCXRD Investigation of a Ge/Si(001) Island Multilayer Structure".半导体学报 28.2(2007):145-148.
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