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The mechanism of blueshift in excitation-intensity-dependent photo luminescence spectrum of nitride multiple quantum wells 期刊论文
JOURNAL OF LUMINESCENCE, 2002, 卷号: 99, 期号: 1, 页码: 35-38
Authors:  Chen Z;  Lu DC;  Wang XH;  Liu XL;  Yuan HR;  Han PD;  Wang D;  Wang ZG;  Li GH;  Lu DC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Photoluminescence  Excitation Transfer Mechanism  Gan  Ingan  Mocvd  Ingan Single  Emission  Polarization  
Nitrogen vacancy scattering in GaN grown by metal-organic vapor phase epitaxy 期刊论文
SOLID-STATE ELECTRONICS, 2002, 卷号: 46, 期号: 12, 页码: 2069-2074
Authors:  Chen Z;  Yuan HR;  Lu DC;  Sun XH;  Wan SK;  Liu XL;  Han PD;  Wang XH;  Zhu QS;  Wang ZG;  Chen Z,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China.
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Nitrogen Vacancy Scattering  Gan  Mobility  Mocvd  N-type Gan  Nitride  Films  
Indium doping effect on GaN in the initial growth stage 期刊论文
JOURNAL OF ELECTRONIC MATERIALS, 2001, 卷号: 30, 期号: 8, 页码: 977-979
Authors:  Yuan HR;  Lu DC;  Liu XL;  Chen Z;  Wang XH;  Wang D;  Han PD;  Yuan HR,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(209Kb)  |  Favorite  |  View/Download:962/327  |  Submit date:2010/08/12
Gan  Indium Doping  Initial Growth Stage  Morphology  Optical Transmission  Photoluminescence  Vapor-phase Epitaxy  Buffer Layer  Films  Sapphire  Deposition  
Growth and characterization of GaN on LiGaO2 期刊论文
JOURNAL OF CRYSTAL GROWTH, 1998, 卷号: 195, 期号: 1-4, 页码: 304-308
Authors:  Duan SK;  Teng XG;  Han PD;  Lu DC;  Duan SK,Chinese Acad Sci,Inst Semicond,Natl Integrated Optoelect Lab,Beijing 100083,Peoples R China. 电子邮箱地址:
Adobe PDF(161Kb)  |  Favorite  |  View/Download:845/289  |  Submit date:2010/08/12
Movpe  Gan  Substrate  Diodes  
Microstructure evolution of GaN buffer layer on MgAl2O4 substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 1998, 卷号: 193, 期号: 4, 页码: 478-483
Authors:  Yang HF;  Han PD;  Cheng LS;  Zhang Z;  Duan SK;  Teng XG;  Han PD,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Gan  Mgal2o4  Buffer Layer  Threading Dislocation  Laser-diodes  Transmission Electron Microscopy  Grown Gan  Chemical-vapor-deposition  Films  Sapphire  Nitride  Defects