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An Improved Selective Area Growth Method in Fabrication of Electroabsorption Modulated Laser 会议论文
AOE 2007 ASIA OPTICAL FIBER COMMUNICATION & OPTOELECTRONIC EXPOSITION & CONFERENCE, Shanghai, PEOPLES R CHINA, OCT 17-19, 2007
Authors:  Wang H;  Zhu HL;  Cheng YB;  Chen D;  Zhang W;  Wang LS;  Zhang YX;  Sun Y;  Wang W;  Wang, H, CAS, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
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N型GaN的持续光电导 期刊论文
半导体学报, 1999, 卷号: 20, 期号: 5, 页码: 371
Authors:  汪连山;  刘祥林;  岳国珍;  王晓晖;  汪度;  陆大成;  王占国
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掺硅氮化镓材料的MOVPE生长及其性质研究 期刊论文
半导体学报, 1999, 卷号: 20, 期号: 7, 页码: 534
Authors:  刘祥林;  汪连山;  陆大成;  汪度;  王晓晖;  林兰英
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氮化镓缓冲层生长过程分析 期刊论文
半导体学报, 1999, 卷号: 20, 期号: 7, 页码: 529
Authors:  刘祥林;  汪连山;  陆大成;  王晓晖;  汪度;  林兰英
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氮化镓缓冲层的物理性质 期刊论文
半导体学报, 1999, 卷号: 633, 期号: 0
Authors:  刘祥林;  汪连山;  陆大成;  王晓晖;  汪度;  林兰英
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The growth and characterization of GaN grown on an Al2O3 coated (001)Si substrate by metalorganic vapor phase epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 1998, 卷号: 193, 期号: 4, 页码: 484-490
Authors:  Wang LS;  Liu XL;  Zan YD;  Wang D;  Lu DC;  Wang ZG;  Wang YT;  Cheng LS;  Zhang Z;  Wang LS,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China. 电子邮箱地址: lswang@red.semi.ac.cn
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Gan  Movpe Growth  Al2o3 Coated Si Substrate  Crystal Structure  Single Crystalline Gan  Photoluminescence Spectrum  High-quality Gan  Molecular-beam Epitaxy  Intermediate Layer  Buffer Layers  Si  Films  Aln  Deposition  Sapphire  
Microstructure evolution of GaN buffer layer on MgAl2O4 substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 1998, 卷号: 193, 期号: 4, 页码: 478-483
Authors:  Yang HF;  Han PD;  Cheng LS;  Zhang Z;  Duan SK;  Teng XG;  Han PD,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Gan  Mgal2o4  Buffer Layer  Threading Dislocation  Laser-diodes  Transmission Electron Microscopy  Grown Gan  Chemical-vapor-deposition  Films  Sapphire  Nitride  Defects  
Al_2O_3/Si(001)衬底上GaN外延薄膜的制备 期刊论文
中国科学. E辑,技术科学, 1998, 卷号: 28, 期号: 1, 页码: 32
Authors:  汪连山;  刘祥林;  昝育德;  汪度;  王俊;  陆大成;  王占国
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高纯氮化镓外延材料的制备 期刊论文
高技术通讯, 1998, 卷号: 8, 期号: 8, 页码: 35
Authors:  刘祥林;  王晓晖;  汪度;  汪连山;  王成新;  韩培德;  陆大成;  林兰英
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环境中砷的治理和检测的新方法、新设备 成果
1994
Accomplishers:  闻瑞梅;  彭永清;  邓礼生;  刘任重;  陈朗星;  刘成海
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