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Phase-separation suppression in GaN-rich side of GaNP alloys grown by metal-organic chemical vapor deposition 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2005, 卷号: 80, 期号: 1, 页码: 141-144
Authors:  Chen DJ;  Shen B;  Bi ZX;  Zhang KX;  Gu SL;  Zhang R;  Shi, Y;  Zheng YD;  Sun XH;  Wan SK;  Wang ZG;  Shen, B, Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China. 电子邮箱地址: bshen@netra.nju.edu.cn
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Molecular-beam Epitaxy  
Photoluminescence of Mg-doped GaN grown by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2003, 卷号: 21, 期号: 4, 页码: 838-841
Authors:  Qu BZ;  Zhu QS;  Sun XH;  Wan SK;  Wang ZG;  Nagai H;  Kawaguchi Y;  Hiramatsu K;  Sawaki N;  Qu BZ,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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P-type Gan  Light-emitting-diodes  Localized Excitons  Gallium Nitride  Films  Defects  Luminescence  Compensation  Spectroscopy  Acceptors  
GaN1-xPx ternary alloys with high P composition grown by metal-organic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 255, 期号: 1-2, 页码: 52-56
Authors:  Chen DJ;  Shen B;  Bi ZX;  Zhang KX;  Gu SL;  Zhang R;  Shi Y;  Zheng YD;  Sun XH;  Wan SK;  Wang ZG;  Shen B,Nanjing Univ,Natl Lab Solid State Microstruct,Nanjing 210093,Peoples R China.
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Metalorganic Chemical Vapor Deposition  Nitrides  Semiconducting Iii-v Materials  Molecular-beam Epitaxy  Gan-rich Side  Radical Cell  Iii-v  
Structural and optical characterization of Zn1-xCdxO thin films deposited by dc reactive magnetron sputtering 期刊论文
CHINESE PHYSICS LETTERS, 2003, 卷号: 20, 期号: 6, 页码: 942-943
Authors:  Ma DW;  Ye ZZ;  Huang JY;  Zhao BH;  Wan SK;  Sun XH;  Wang ZG;  Ma DW,Zhejiang Univ,State Key Lab Silicon Mat,Hangzhou 310027,Peoples R China.
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Phase Epitaxial-growth  Photoluminescent Properties  Spray-pyrolysis  Zno  Mgxzn1-xo  
Nitrogen vacancy scattering in GaN grown by metal-organic vapor phase epitaxy 期刊论文
SOLID-STATE ELECTRONICS, 2002, 卷号: 46, 期号: 12, 页码: 2069-2074
Authors:  Chen Z;  Yuan HR;  Lu DC;  Sun XH;  Wan SK;  Liu XL;  Han PD;  Wang XH;  Zhu QS;  Wang ZG;  Chen Z,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China.
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Nitrogen Vacancy Scattering  Gan  Mobility  Mocvd  N-type Gan  Nitride  Films  
GAN_(1-x)P_x三元合金的MOCVD生长 期刊论文
半导体学报, 2002, 卷号: 23, 期号: 7, 页码: 782-784
Authors:  陈敦军;  毕朝霞;  沈波;  张开骁;  顾书林;  张荣;  施毅;  胡立群;  郑有(火+斗);  孙学浩;  万寿科;  王占国
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InGaN光致发光性质与温度的关系 期刊论文
半导体学报, 2001, 卷号: 22, 期号: 5, 页码: 569
Authors:  樊志军;  刘祥林;  万寿科;  王占国
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偏振差分反射谱(RDS)测试系统 期刊论文
功能材料与器件学报, 2000, 卷号: 6, 期号: 4, 页码: 388
Authors:  万寿科;  陈涌海;  王占国
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RECRYSTALLIZATION, IMPURITY MIGRATION AND OPTICAL ACTIVATION OF YB-IMPLANTED SILICON INDUCED BY RAPID THERMAL ANNEALING 期刊论文
PHYSICS LETTERS A, 1994, 卷号: 189, 期号: 5, 页码: 423-427
Authors:  XU TB;  ZHU PR;  LI DQ;  REN TQ;  SUN HL;  WAN SK;  XU TB CHINESE ACAD SCIINST PHYSBEIJING 100080PEOPLES R CHINA
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Longitudinal Mode-operation  Rutherford Backscattering  Erbium  Electroluminescence  Lasers  
调谐激光晶体Cr(3+):ZnWO4光致发光特性的研究 期刊论文
物理学报, 1994, 卷号: 43, 期号: 5, 页码: 851
Authors:  陈伟;  夏上达;  汤洪高;  刘竟青;  臧竞存;  万寿科
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