SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Indium doping effect on GaN in the initial growth stage
Yuan HR; Lu DC; Liu XL; Chen Z; Wang XH; Wang D; Han PD; Yuan HR,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
2001
Source PublicationJOURNAL OF ELECTRONIC MATERIALS
ISSN0361-5235
Volume30Issue:8Pages:977-979
AbstractThree minutes' growth was carried out to investigate the indium-doping effect on initially grown GaN. Indium-doped and undoped samples were grown by low-pressure metalorganic vapor phase epitaxy. Atomic force microscope observation revealed that In-doping modified the morphology of the nuclei. Indium-doping also enhanced wetting between the buffer and nuclei layers, which was also supported by optical transmission. Photoluminescence suggested that indium-doping obviously enhanced band-edge related emission even in the nucleation stage. X-ray diffraction performed on samples grown for 20 minutes indicated improvement of the crystalline quality through indium-doping. The mechanism of the indium-doping effect was discussed.
metadata_83chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
KeywordGan Indium Doping Initial Growth Stage Morphology Optical Transmission Photoluminescence Vapor-phase Epitaxy Buffer Layer Films Sapphire Deposition
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2010-08-12
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/12120
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorYuan HR,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Recommended Citation
GB/T 7714
Yuan HR,Lu DC,Liu XL,et al. Indium doping effect on GaN in the initial growth stage[J]. JOURNAL OF ELECTRONIC MATERIALS,2001,30(8):977-979.
APA Yuan HR.,Lu DC.,Liu XL.,Chen Z.,Wang XH.,...&Yuan HR,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China..(2001).Indium doping effect on GaN in the initial growth stage.JOURNAL OF ELECTRONIC MATERIALS,30(8),977-979.
MLA Yuan HR,et al."Indium doping effect on GaN in the initial growth stage".JOURNAL OF ELECTRONIC MATERIALS 30.8(2001):977-979.
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