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Quasi-thermo dynamic analysis of MOVPE growth of GaxAlyIn1-x-yN 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 234, 期号: 1, 页码: 145-152
Authors:  Lu DC;  Duan SK;  Lu DC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Computer Simulation  Molecular Vapor Phase Epitaxy  Nitrides  Semiconducting Quaternary Alloys  Chemical-vapor-deposition  Quaternary Alloys  Phase Epitaxy  Gan  Alingan  
MOVPE生长Ga_xAl_yIn_(1-x-y)N的准热力学模型(英文) 期刊论文
半导体学报, 2001, 卷号: 22, 期号: 6, 页码: 677
Authors:  陆大成;  段树坤
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A Quasi-Therm odynam ic Model of MOVPE of InGaN 期刊论文
半导体学报, 2000, 卷号: 21, 期号: 2, 页码: 105
Authors:  Lu DC(陆大成);  Duan SK(段树坤)
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Quasi-Thermodynamic Model of MOVPE of InAlN 期刊论文
半导体学报, 2000, 卷号: 21, 期号: 8, 页码: 729
Authors:  Lu DC(陆大成);  Duan SK(段树坤)
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Raman scattering in hexagonal GaN epitaxial layer grown on MgAl2O4 substrate 期刊论文
JOURNAL OF APPLIED PHYSICS, 1999, 卷号: 86, 期号: 4, 页码: 2051-2054
Authors:  Li GH;  Zhang W;  Han HX;  Wang ZP;  Duan SK;  Li GH,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,Beijing 100083,Peoples R China.
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Quasi-Thermodynamic Model for MOVPE of AlGaN 期刊论文
半导体学报, 1999, 卷号: 20, 期号: 11, 页码: 1026
Authors:  Lu DC(陆大成);  Duan SK(段树坤)
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Growth and characterization of GaN on LiGaO2 and LiAlO2 会议论文
BLUE LASER AND LIGHT EMITTING DIODES II, CHIBA, JAPAN, SEP 29-OCT 02, 1998
Authors:  Duan SK;  Teng XG;  Han PD;  Lu DC;  Duan SK Chinese Acad Sci Inst Semicond Natl Integrated Optoelect Lab Beijing 100083 Peoples R China.
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Diodes  
MOVPE growth of GaN and LED on (111) MgAl2O4 期刊论文
JOURNAL OF CRYSTAL GROWTH, 1998, 卷号: 189, 期号: 0, 页码: 197-201
Authors:  Duan SK;  Teng XG;  Wang YT;  Li GH;  Jiang HX;  Han P;  Lu DC;  Duan SK,Chinese Acad Sci,Inst Semicond,Natl Integrated Optoelect Lab,POB 912,Beijing 100083,Peoples R China. 电子邮箱地址: skduan@red.semi.ac.cn
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Gan  Mgal2o4  Movpe  Led  Diodes  
Growth and characterization of GaN on LiGaO2 会议论文
JOURNAL OF CRYSTAL GROWTH, 195 (1-4), LA JOLLA, CALIFORNIA, MAY 31-JUN 04, 1998
Authors:  Duan SK;  Teng XG;  Han PD;  Lu DC;  Duan SK Chinese Acad Sci Inst Semicond Natl Integrated Optoelect Lab Beijing 100083 Peoples R China. 电子邮箱地址: skduan@red.semi.ac.cn
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Diodes  
MOVPE growth of GaN and LED on (111) MgAl2O4 会议论文
JOURNAL OF CRYSTAL GROWTH, 189, TOKUSHIMA CITY, JAPAN, OCT 27-31, 1997
Authors:  Duan SK;  Teng XG;  Wang YT;  Li GH;  Jiang HX;  Han P;  Lu DC;  Duan SK Chinese Acad Sci Inst Semicond Natl Integrated Optoelect Lab POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: skduan@red.semi.ac.cn
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Gan  Mgal2o4  Movpe  Led  Diodes