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Dislocation scattering in AlxGa1-xN/GaN heterostructures 期刊论文
APPLIED PHYSICS LETTERS, 2008, 卷号: 93, 期号: 18, 页码: Art. No. 182111
Authors:  Xu, XQ;  Liu, XL;  Han, XX;  Yuan, HR;  Wang, J;  Guo, Y;  Song, HP;  Zheng, GL;  Wei, HY;  Yang, SY;  Zhu, QS;  Wang, ZG;  Xu, XQ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xlliu@red.semi.ac.cn;  qszhu@semi.ac.cn
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Aluminium Compounds  Dislocation Density  Electron Mobility  Gallium Compounds  Iii-v Semiconductors  Interface Roughness  Semiconductor Heterojunctions  Two-dimensional Electron Gas  Wide Band Gap Semiconductors  
Dislocation scattering in a two-dimensional electron gas of an AlxGa1-xN/GaN heterostructure 期刊论文
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2004, 卷号: 241, 期号: 13, 页码: 3000-3008
Authors:  Han XX;  Li DB;  Yuan HR;  Sun XH;  Liu XL;  Wang XH;  Zhu QS;  Wang ZG;  Han, XX, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xxhan@red.semi.ac.cn
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Field-effect Transistors  
Luminescence study of (11(2)over-bar0) GaN film grown by metalorganic chemical-vapor deposition 期刊论文
JOURNAL OF APPLIED PHYSICS, 2003, 卷号: 93, 期号: 1, 页码: 316-319
Authors:  Chen Z;  Lu DC;  Liu XL;  Wang XH;  Han PD;  Wang D;  Yuan HR;  Wang ZG;  Li GH;  Fang ZL;  Chen Z,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Mg-doped Gan  Gallium Nitride  Phase Epitaxy  Substrate  Layer  
The growth morphologies of GaN layer on Si(111) substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 247, 期号: 1-2, 页码: 91-98
Authors:  Lu YA;  Liu XL;  Lu DC;  Yuan HR;  Hu GQ;  Wang XH;  Wang ZG;  Duan XF;  Lu DC,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Si(111) Substrate  Heteroepitaxy  Metalorganic Chemical Vapor Deposition  Gan  Light-emitting-diodes  Chemical-vapor-deposition  Nucleation Layers  Buffer Layer  Silicon  Sapphire  Nitride  Epitaxy  Stress  Strain  
The mechanism of blueshift in excitation-intensity-dependent photo luminescence spectrum of nitride multiple quantum wells 期刊论文
JOURNAL OF LUMINESCENCE, 2002, 卷号: 99, 期号: 1, 页码: 35-38
Authors:  Chen Z;  Lu DC;  Wang XH;  Liu XL;  Yuan HR;  Han PD;  Wang D;  Wang ZG;  Li GH;  Lu DC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Photoluminescence  Excitation Transfer Mechanism  Gan  Ingan  Mocvd  Ingan Single  Emission  Polarization  
A geometrical model of GaN morphology in initial growth stage 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 234, 期号: 1, 页码: 115-120
Authors:  Yuan HR;  Chen Z;  Lu DC;  Liu XL;  Han PD;  Wang XH;  Lu DC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Computer Simulation  Crystal Morphology  Atomic Force Microscopy  Nitrides  Ain Buffer Layer  Sapphire  
Statistical investigation on morphology development of gallium nitride in initial growth stage 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 234, 期号: 1, 页码: 77-84
Authors:  Yuan HR;  Lu DC;  Liu XL;  Chen Z;  Han P;  Wang XH;  Wang D;  Lu DC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat & Sci,POB 912,Beijing 100083,Peoples R China.
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Atomic Force Microscopy  Crystal Morphology  Organic Vapor Phase Epitaxy  Nitrides  Chemical-vapor-deposition  Ain Buffer Layer  Gan  Sapphire  Aln  Epitaxy  Movpe  
Investigation of GaN layer grown on Si(111) substrate using an ultrathin AlN wetting layer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 236, 期号: 1-3, 页码: 77-84
Authors:  Lu Y;  Liu XL;  Lu DC;  Yuan HR;  Chen Z;  Fan TW;  Li YF;  Han PD;  Wang XH;  Wang D;  Wang ZG;  Lu DC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Substrates  Heteroepitaxy  Metalorganic Chemical Vapor Deposition  Gallium Compounds  Nitrides  Intermediate Layer  Epitaxial-growth  Silicon  Sapphire  Film  
A new method to fabricate InGaN quantum dots by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 235, 期号: 1-4, 页码: 188-194
Authors:  Chen Z;  Lu DH;  Yuan HR;  Han P;  Liu XL;  Li YF;  Wang XH;  Lu Y;  Wang ZG;  Lu DH,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat & Sci,POB 912,Beijing 100083,Peoples R China.
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Nanostructures  Metalorganic Chemical Vapor Deposition  Nitrides  Gan Buffer Layer  Epitaxial-growth  Phase Epitaxy  Surfaces  Temperature  Dependence  Mode  Wire  
Indium doping effect on GaN in the initial growth stage 期刊论文
JOURNAL OF ELECTRONIC MATERIALS, 2001, 卷号: 30, 期号: 8, 页码: 977-979
Authors:  Yuan HR;  Lu DC;  Liu XL;  Chen Z;  Wang XH;  Wang D;  Han PD;  Yuan HR,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Gan  Indium Doping  Initial Growth Stage  Morphology  Optical Transmission  Photoluminescence  Vapor-phase Epitaxy  Buffer Layer  Films  Sapphire  Deposition