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Large and robust electrical spin injection into GaAs at zero magnetic field using an ultrathin CoFeB/MgO injector 期刊论文
PHYSICAL REVIEW B, 2014, 卷号: 90, 期号: 8, 页码: 085310
Authors:  Liang, SH;  Zhang, TT;  Barate, P;  Frougier, J;  Vidal, M;  Renucci, P;  Xu, B;  Jaffres, H;  George, JM;  Devaux, X;  Hehn, M;  Marie, X;  Mangin, S;  Yang, HX;  Hallal, A;  Chshiev, M;  Amand, T;  Liu, HF;  Liu, DP;  Han, XF;  Wang, ZG;  Lu, Y
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Anomalous Temperature Dependence of Photoluminescence in InAs/InAlGaAs/InP Quantum Wire and Dot Hybrid Nanostructures 期刊论文
CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 2, 页码: Article no.27801
Authors:  Yang XR;  Xu B;  Wang HF;  Zhao GQ;  Shi SH;  Shen XZ;  Li JF;  Wang ZG;  Yang, XR, Handan Coll, Dept Phys & Elect Engn, Handan 056005, Peoples R China.
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Continuous-wave Operation  Emission  Lasers  Wavelength  Excitons  Energy  
分子束外延GaN/GaAs立方相异质结构的电子显微分析 期刊论文
半导体学报, 1999, 卷号: 20, 期号: 1, 页码: 58
Authors:  韩培德;  杨海峰;  杨辉;  林耀望;  张泽;  李新峰;  周增圻
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Microstructure evolution of GaN buffer layer on MgAl2O4 substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 1998, 卷号: 193, 期号: 4, 页码: 478-483
Authors:  Yang HF;  Han PD;  Cheng LS;  Zhang Z;  Duan SK;  Teng XG;  Han PD,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Gan  Mgal2o4  Buffer Layer  Threading Dislocation  Laser-diodes  Transmission Electron Microscopy  Grown Gan  Chemical-vapor-deposition  Films  Sapphire  Nitride  Defects  
半导体GaN/MgAl2O4中缓冲层的透射电子显微分析 期刊论文
半导体学报, 1998, 卷号: 19, 期号: 10, 页码: 736
Authors:  韩培德;  杨海峰;  张泽;  段树坤;  滕学公
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