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Effects of different modified underlayer surfaces on growth and optical properties of InGaN quantum dots 期刊论文
VACUUM, 2005, 卷号: 77, 期号: 3, 页码: 307-314
Authors:  Han, XX;  Li, JM;  Wu, JJ;  Wang, XH;  Li, DB;  Liu, XL;  Han, PD;  Zhu, QS;  Wang, ZG;  Han, XX, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xxhan@red.semi.ac.cn
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Nanostructure  
Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 266, 期号: 4, 页码: 423-428
Authors:  Han XX;  Chen Z;  Li DB;  Wu JJ;  Li JM;  Sun XH;  Liu XL;  Han PD;  Wang XH;  Zhu QS;  Wang ZG;  Han, XX, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xxhan@red.semi.ac.cn
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Nanostructure  
Luminescence study of (11(2)over-bar0) GaN film grown by metalorganic chemical-vapor deposition 期刊论文
JOURNAL OF APPLIED PHYSICS, 2003, 卷号: 93, 期号: 1, 页码: 316-319
Authors:  Chen Z;  Lu DC;  Liu XL;  Wang XH;  Han PD;  Wang D;  Yuan HR;  Wang ZG;  Li GH;  Fang ZL;  Chen Z,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Mg-doped Gan  Gallium Nitride  Phase Epitaxy  Substrate  Layer  
The mechanism of blueshift in excitation-intensity-dependent photo luminescence spectrum of nitride multiple quantum wells 期刊论文
JOURNAL OF LUMINESCENCE, 2002, 卷号: 99, 期号: 1, 页码: 35-38
Authors:  Chen Z;  Lu DC;  Wang XH;  Liu XL;  Yuan HR;  Han PD;  Wang D;  Wang ZG;  Li GH;  Lu DC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Photoluminescence  Excitation Transfer Mechanism  Gan  Ingan  Mocvd  Ingan Single  Emission  Polarization  
A geometrical model of GaN morphology in initial growth stage 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 234, 期号: 1, 页码: 115-120
Authors:  Yuan HR;  Chen Z;  Lu DC;  Liu XL;  Han PD;  Wang XH;  Lu DC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Computer Simulation  Crystal Morphology  Atomic Force Microscopy  Nitrides  Ain Buffer Layer  Sapphire  
Investigation of GaN layer grown on Si(111) substrate using an ultrathin AlN wetting layer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 236, 期号: 1-3, 页码: 77-84
Authors:  Lu Y;  Liu XL;  Lu DC;  Yuan HR;  Chen Z;  Fan TW;  Li YF;  Han PD;  Wang XH;  Wang D;  Wang ZG;  Lu DC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Substrates  Heteroepitaxy  Metalorganic Chemical Vapor Deposition  Gallium Compounds  Nitrides  Intermediate Layer  Epitaxial-growth  Silicon  Sapphire  Film  
Polarity dependence of hexagonal GaN films on two opposite c faces of Al2O3 substrate 期刊论文
APPLIED PHYSICS LETTERS, 2001, 卷号: 78, 期号: 25, 页码: 3974-3976
Authors:  Han PD;  Wang ZG;  Duan XF;  Zhang Z;  Han PD,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Molecular-beam Epitaxy  Surface Polarity  Single-crystals  Buffer Layer  Grown Gan  Deposition  Morphology  Quality  Zno  
Indium doping effect on GaN in the initial growth stage 期刊论文
JOURNAL OF ELECTRONIC MATERIALS, 2001, 卷号: 30, 期号: 8, 页码: 977-979
Authors:  Yuan HR;  Lu DC;  Liu XL;  Chen Z;  Wang XH;  Wang D;  Han PD;  Yuan HR,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Gan  Indium Doping  Initial Growth Stage  Morphology  Optical Transmission  Photoluminescence  Vapor-phase Epitaxy  Buffer Layer  Films  Sapphire  Deposition  
Indium-doping enhanced two-dimensional-electron-gas performance in AlGaN/GaN heterostructures 会议论文
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1, NAGOYA, JAPAN, SEP 24-27, 2000
Authors:  Yuan HR;  Lu DC;  Liu XL;  Han PD;  Wang XH;  Wang D;  Lu DC Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
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Algan/gan Heterostructures  In-doping  2deg  Electron Sheet Density  X-ray Diffraction  Etching  Chemical-vapor-deposition  Molecular-beam Epitaxy  Phase Epitaxy  Mobility  Growth  Films  
Transmission electron microscopy study of triple-ribbon contrast features in a ZnTe epitaxial layer 期刊论文
PHILOSOPHICAL MAGAZINE LETTERS, 1998, 卷号: 78, 期号: 3, 页码: 203-211
Authors:  Han PD;  Han PD,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Threading Dislocation Densities  Ii-vi Compounds  Misfit Dislocations  Semiconductors  Origin  Films