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聚光太阳电池的制作方法 专利
专利类型: 发明, 申请日期: 2006-08-30, 公开日期: 2009-06-04, 2009-06-11
Inventors:  陈诺夫;  白一鸣;  王晓晖;  梁平;  陆大成
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集成太阳电池的制备方法 专利
专利类型: 发明, 申请日期: 2006-06-14, 公开日期: 2009-06-04, 2009-06-11
Inventors:  陈诺夫;  白一鸣;  王晓晖;  陆大成
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在硅衬底上生长无裂纹Ⅲ族氮化物薄膜的方法 专利
专利类型: 发明, 申请日期: 2005-08-10, 公开日期: 2009-06-04, 2009-06-11
Inventors:  陆沅;  刘祥林;  陆大成;  王晓晖;  王占国
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Luminescence properties of multi-layer InGaN quantum dots grown on C- and R-plane sapphire substrates 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2005, 卷号: 27, 期号: 3, 页码: 314-318
Authors:  Chen, Z;  Chua, SJ;  Han, PD;  Liu, XL;  Lu, DC;  Zhu, QS;  Wang, ZG;  Tripathy, S;  Tripathy, S, Inst Mat Res & Engn, 3 Res Link, Singapore 117602, Singapore. 电子邮箱地址: tripathy-sudhiranjan@imre.a-star.edu.sg
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Gan  
一种制作白光发光二极管的方法 专利
专利类型: 发明, 申请日期: 2004-02-11, 公开日期: 2009-06-04, 2009-06-11
Inventors:  陈振;  韩培德;  陆大成;  刘祥林;  王晓晖;  朱勤生;  王占国
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Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures 会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
Authors:  Chen Z;  Chua SJ;  Yuan HR;  Liu XL;  Lu DC;  Han PD;  Wang ZG;  Chen Z Singapore MIT Alliance AMMNS E4-04-10NUS4 Engn Dr3 Singapore 117576 Singapore. 电子邮箱地址: smacz@nus.edu.sg
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Metalorganic Chemical Vapor Deposition  Semiconducting Iii-v Materials  Doped Al(x)Ga1-xn/gan Heterostructures  Carrier Confinement  Effect Transistors  Photoluminescence  Mobility  Heterojunction  Interface  Hfets  
Growth of crack-free GaN films on Si(111) substrate by using Al-rich AlN buffer layer 期刊论文
JOURNAL OF APPLIED PHYSICS, 2004, 卷号: 96, 期号: 9, 页码: 4982-4988
Authors:  Lu Y;  Cong GW;  Liu XL;  Lu DC;  Zhu QS;  Wang XH;  Wu JJ;  Wang ZG;  Lu, Y, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: yuanlu@semi.ac.cn
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Chemical-vapor-deposition  
Depth distribution of the strain in the GaN layer with low-temperature AlN interlayer on Si(111) substrate studied by Rutherford backscattering/channeling 期刊论文
APPLIED PHYSICS LETTERS, 2004, 卷号: 85, 期号: 23, 页码: 5562-5564
Authors:  Lu, Y;  Cong, GW;  Liu, XL;  Lu, DC;  Wang, ZG;  Wu, MF;  Lu, Y, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: yuanlu@semi.ac.cn
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Stress  
Influence of the growth temperature of the high-temperature AlN buffer on the properties of GaN grown on Si(111) substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 263, 期号: 1-4, 页码: 4-11
Authors:  Lu Y;  Liu XL;  Wang XH;  Lu DC;  Li DB;  Han XX;  Cong GW;  Wang ZG;  Lu, Y, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: yuanlu@red.semi.ac.cn
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Substrates  
Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 268, 期号: 3-4, 页码: 504-508
Authors:  Chen, Z;  Chua, SJ;  Yuan, HR;  Liu, XL;  Lu, DC;  Han, PD;  Wang, ZG;  Chen, Z, Singapore MIT Alliance, AMMNS, E4-04-10,NUS,4 Engn Dr,3, Singapore 117576, Singapore. 电子邮箱地址: smacz@nus.edu.sg
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Metalorganic Chemical Vapor Deposition