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Nitrogen vacancy scattering in GaN grown by metal-organic vapor phase epitaxy
Chen Z; Yuan HR; Lu DC; Sun XH; Wan SK; Liu XL; Han PD; Wang XH; Zhu QS; Wang ZG; Chen Z,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China.
2002
Source PublicationSOLID-STATE ELECTRONICS
ISSN0038-1101
Volume46Issue:12Pages:2069-2074
AbstractElectron mobility limited by nitrogen vacancy scattering was taken into account to evaluate the quality of n-type GaN grown by metal-organic vapor phase epitaxy. Two assumptions were made for this potential for the nitrogen vacancy (1) it acts in a short range, and (2) does not diverge at the vacancy core. According to the above assumptions, a general expression to describe the scattering potential U(r) = - U-0 exp[- (r/beta)(n)], (n = 1, 2,...,infinity) was constructed, where beta is the potential well width. The mobilities for n = 1, 2, and infinity were calculated based on this equation, corresponding to the simple exponential, Gaussian and square well scattering potentials, respectively. In the limiting case of kbeta << 1 (where k is the wave vector), all of the mobilities calculated for n = 1, 2, and infinity showed a same result but different prefactor. Such difference was discussed in terms of the potential tail and was found that all of the calculated mobilities have T-1/2 temperature and beta(-6) well width dependences. A mobility taking account of a spatially complicate scattering potential was studied and the same temperature dependence was also found. A best fit between the calculated results and experimental data was obtained by taking account of the nitrogen vacancy scattering. (C) 2002 Elsevier Science Ltd. All rights reserved.
metadata_83chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
KeywordNitrogen Vacancy Scattering Gan Mobility Mocvd N-type Gan Nitride Films
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2010-08-12
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/11720
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorChen Z,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China.
Recommended Citation
GB/T 7714
Chen Z,Yuan HR,Lu DC,et al. Nitrogen vacancy scattering in GaN grown by metal-organic vapor phase epitaxy[J]. SOLID-STATE ELECTRONICS,2002,46(12):2069-2074.
APA Chen Z.,Yuan HR.,Lu DC.,Sun XH.,Wan SK.,...&Chen Z,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China..(2002).Nitrogen vacancy scattering in GaN grown by metal-organic vapor phase epitaxy.SOLID-STATE ELECTRONICS,46(12),2069-2074.
MLA Chen Z,et al."Nitrogen vacancy scattering in GaN grown by metal-organic vapor phase epitaxy".SOLID-STATE ELECTRONICS 46.12(2002):2069-2074.
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