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Fracture properties of PECVD silicon nitride thin films by long rectangular memrane bulge test 会议论文
2008 3RD IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS, Sanya, PEOPLES R CHINA, JAN 06-09, 2008
作者:  Zhou, W;  Yang, JL;  Li, Y;  Yang, FH;  Yang, JL, Chinese Acad Sci, Inst Semicond, Beijing 100864, Peoples R China.
Adobe PDF(267Kb)  |  收藏  |  浏览/下载：1423/372  |  提交时间：2010/03/09
Bulge Test  Fracture Property  Silicon Nitride  Weibull Distribution Function  
High-efficiency GaN-based blue LEDs grown on nano-patterned sapphire substrates for solid-state lighting - art. no. 684103 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Yan, FW;  Gao, HY;  Zhang, Y;  Li, JM;  Zeng, YP;  Wang, GH;  Yang, FH;  Yan, FW, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.
Adobe PDF(1746Kb)  |  收藏  |  浏览/下载：2911/891  |  提交时间：2010/03/09
Gan  Mocvd  Led  Nano-pattern  Sem  Hrxrd  Pl  
Improvement of GaN-based light emitting diodes performance grown on sapphire substrates patterned by wet etching - art. no. 684107 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Gao, HY;  Yan, FW;  Zhang, Y;  Li, JM;  Zeng, YP;  Wang, GH;  Yang, FH;  Gao, HY, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, A35 Qinghua E Rd, Beijing 100083, Peoples R China.
Adobe PDF(753Kb)  |  收藏  |  浏览/下载：2842/842  |  提交时间：2010/03/09
Pyramidal Patterned Substrate  Ingan/gan  Light-emitting Diode  Wet Etching  
The effects of sapphire substrates processes to the LED efficiency - art. no. 68410M 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Yang, H;  Chen, Y;  Wang, LB;  Yi, XY;  Fan, JM;  Liu, ZQ;  Yang, FH;  Wang, LC;  Wang, GH;  Zeng, YP;  Li, JM;  Yang, H, Chinese Acad Sci, Inst Semicond, R&D Ctr Semicond Lighting, Beijing 100083, Peoples R China.
Adobe PDF(297Kb)  |  收藏  |  浏览/下载：7242/2096  |  提交时间：2010/03/09
Gan-based Led  Grinding  Ray Tracing  
Plasma induced damage in GaN-based light emitting diodes - art. no. 68410X 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Li, Y;  Yi, XY;  Wang, XD;  Guo, JX;  Wang, LC;  Wang, GH;  Yang, FH;  Zeng, YP;  Li, JM;  Li, Y, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(701Kb)  |  收藏  |  浏览/下载：3997/1521  |  提交时间：2010/03/09
Gan  Led  Plasma  Damage  Etch  Icp  Pecvd  
High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Zhang, Y;  Yan, FW;  Gao, HY;  Li, JM;  Zeng, YP;  Wang, GH;  Yang, FH;  Zhang, Y, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.
Adobe PDF(929Kb)  |  收藏  |  浏览/下载：3613/1292  |  提交时间：2010/03/09
Gan  Nitrides  Led  Mocvd  Patterned Sapphire Substrate  Wet Etching  
Fabrication method of silicon nanostructures by anisotropic etching 会议论文
2008 5TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS, Sorrento, ITALY, SEP 17-19, 2008
作者:  Han, WH;  Yang, X;  Wang, Y;  Yang, FH;  Yu, JZ;  Han, WH, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(1308Kb)  |  收藏  |  浏览/下载：1248/368  |  提交时间：2010/03/09
Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z 会议论文
Ultrafast Phenomena in Semiconductors and Nanostructure Materials X丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), San Jose, CA, JAN 23-25, 2006
作者:  Sun, Z (Sun, Z.);  Xu, ZY (Xu, Z. Y.);  Yang, XD (Yang, X. D.);  Sun, BQ (Sun, B. Q.);  Ji, Y (Ji, Y.);  Zhang, SY (Zhang, S. Y.);  Ni, HQ (Ni, H. Q.);  Niu, ZC (Niu, Z. C.);  Sun, Z, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(305Kb)  |  收藏  |  浏览/下载：1701/401  |  提交时间：2010/03/29
Gainnas/gaas Quantum Wells  Optical Properties  Nonradiative Recombination Effect  Time-resolved Photoluminescence  Pl Decay Dynamics  Pl Thermal Quenching  Molecular-beam Epitaxy  Gaasn Alloys  Excitation  
Optical study of localized and delocalized states in GaAsN/GaAs 会议论文
GAN AND RELATED ALLOYS - 2003, 798, Boston, MA, DEC 01-05, 2003
作者:  Xu ZY;  Luo XD;  Yang XD;  Tan PH;  Yang CL;  Ge WK;  Zhang Y;  Mascarenhas A;  Xin HP;  Tu CW;  Xu ZY Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(190Kb)  |  收藏  |  浏览/下载：1603/334  |  提交时间：2010/10/29
Molecular-beam Epitaxy  Alloys  Gaas1-xnx  Photoluminescence  Relaxation  
Design of high brightness cubic-GaN LEDs grown on GaAs substrate 会议论文
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 42, SEOUL, SOUTH KOREA, AUG 20-23, 2002
作者:  Sun YP;  Shen XM;  Zhang ZH;  Zhao DG;  Feng ZH;  Fu Y;  Zhang SN;  Yang H;  Sun YP Chinese Acad Sci State Key Lab Integrated Optoelect Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(172Kb)  |  收藏  |  浏览/下载：1275/260  |  提交时间：2010/11/15
Wafer Bunding  Cubic Gan  Light-emitting-diodes  Field-effect Transistor  Single-crystal Gan  Microwave Performance  Mirror  Junction