Optical study of localized and delocalized states in GaAsN/GaAs

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Optical study of localized and delocalized states in GaAsN/GaAs
	Xu ZY; Luo XD; Yang XD; Tan PH; Yang CL; Ge WK; Zhang Y; Mascarenhas A; Xin HP; Tu CW; Xu ZY Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
	2003
会议名称	Symposium on GaN and Related Alloys held at the MRS Fall Meeting
会议录名称	GAN AND RELATED ALLOYS - 2003, 798
页码	695-700
会议日期	DEC 01-05, 2003
会议地点	Boston, MA
出版地	506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA
出版者	MATERIALS RESEARCH SOCIETY
ISSN	0272-9172
ISBN	1-55899-736-9
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	Taking advantages of short pulse excitation and time-resolved photoluminescence (PL), we have studied the exciton localization effect in a number of GaAsN alloys and GaAsN/GaAs quantum wells (QWs). In the PL spectra, an extra transition located at the higher energy side of the commonly reported N-related emissions is observed. By measuring PL dependence on temperature and excitation power along with PL dynamics study, the new PL peak has been identified as a transition of the band edge-related recombination in dilute GaAsN alloy and delocalized transition in QWs. Using selective excitation PL we further attribute the localized emission in QWs to the excitons localized at the GaAsN/GaAs interfaces. This interface-related exciton localization could be greatly reduced by a rapid thermal annealing.
关键词	Molecular-beam Epitaxy Alloys Gaas1-xnx Photoluminescence Relaxation
学科领域	半导体物理
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13583
专题	中国科学院半导体研究所（2009年前）
通讯作者	Xu ZY Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Xu ZY,Luo XD,Yang XD,et al. Optical study of localized and delocalized states in GaAsN/GaAs[C]. 506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA:MATERIALS RESEARCH SOCIETY,2003:695-700.

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