High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T
Zhang, Y; Yan, FW; Gao, HY; Li, JM; Zeng, YP; Wang, GH; Yang, FH; Zhang, Y, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.
2008
会议名称Conference on Solid State Lighting and Solar Energy Technologies
会议录名称SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES
页码6841: T8410-T8410
会议日期NOV 12-14, 2007
会议地点Beijing, PEOPLES R CHINA
出版地1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者SPIE-INT SOC OPTICAL ENGINEERING
ISSN0277-786X
ISBN978-0-8194-7016-4
部门归属[zhang, yang; yan, fawang; gao, haiyong; li, jinmin; zeng, yiping; wang, guohong; yang, fuhua] chinese acad sci, inst semicond, semicond lighting technol res & dev ctr, beijing 100083, peoples r china
摘要Patterning sapphire substrate can relax the stress in the nitride epilayer, reduce the threading dislocation density, and significantly improve device performance. In this article, a wet-etching method for sapphire substrate is developed. The effect of substrate surface topographies on the quality of the GaN epilayers and corresponding device performance are investigated. The GaN epilayers grown on the wet-patterned sapphire substrates by MOCVD are characterized by means of scanning electrical microscopy (SEM), atomic force microscopy (AFM), high-resolution x-ray diffraction (HRXRD), and photoluminescence (PL) techniques. In comparison with the planar sapphire substrate, about a 22% increase in device performance with light output power of 13.31 mW@20mA is measured for the InGaN/GaN blue LEDs grown on the wet-patterned sapphire substrate.
关键词Gan Nitrides Led Mocvd Patterned Sapphire Substrate Wet Etching
学科领域光电子学
主办者SPIE.; Chinese Opt Soc.
收录类别CPCI-S
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/7832
专题中国科学院半导体研究所(2009年前)
通讯作者Zhang, Y, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.
推荐引用方式
GB/T 7714
Zhang, Y,Yan, FW,Gao, HY,et al. High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2008:6841: T8410-T8410.
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