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Rashba and Dresselhaus spin-orbit coupling in GaN-based heterostructures probed by the circular photogalvanic effect under uniaxial strain 期刊论文
APPLIED PHYSICS LETTERS, 2010, 卷号: 97, 期号: 18, 页码: Art. No. 181904
Authors:  Yin CM (Yin Chunming);  Shen B (Shen Bo);  Zhang Q (Zhang Qi);  Xu FJ (Xu Fujun);  Tang N (Tang Ning);  Cen LB (Cen Longbin);  Wang XQ (Wang Xinqiang);  Chen YH (Chen Yonghai);  Yu JL (Yu Jinling)
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GaN基功率型LED的P、N双透明接触电极及制备方法 专利
专利类型: 发明, 申请日期: 2008-10-15, 公开日期: 2009-06-04, 2009-06-11
Inventors:  王立彬;  王良臣
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一种氮化镓基小芯片LED阵列结构及制备方法 专利
专利类型: 发明, 申请日期: 2008-10-15, 公开日期: 2009-06-04, 2009-06-11
Inventors:  王立彬;  伊晓燕;  刘志强;  陈宇;  郭德博;  王良臣
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Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111) 期刊论文
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2008, 卷号: 205, 期号: 2, 页码: 294-299
Authors:  Wu, JJ;  Zhao, LB;  Zhang, GY;  Liu, XL;  Zhu, QS;  Wang, ZG;  Jia, QJ;  Guo, LP;  Hu, TD;  Wu, JJ, Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Res Ctr Wide Gap Semicond, Beijing 100871, Peoples R China. 电子邮箱地址: jiejunw@red.semi.ac.cn
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Chemical-vapor-deposition  Temperature Aln Interlayers  Phase Epitaxy  Optical-properties  Surfactant  Substrate  Stress  Si  Reduction  Sapphire  
The effects of sapphire substrates processes to the LED efficiency - art. no. 68410M 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
Authors:  Yang, H;  Chen, Y;  Wang, LB;  Yi, XY;  Fan, JM;  Liu, ZQ;  Yang, FH;  Wang, LC;  Wang, GH;  Zeng, YP;  Li, JM;  Yang, H, Chinese Acad Sci, Inst Semicond, R&D Ctr Semicond Lighting, Beijing 100083, Peoples R China.
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Gan-based Led  Grinding  Ray Tracing  
界面热应力对InP/Si键合质量的影响 期刊论文
固体电子学研究与进展, 2008, 卷号: 28, 期号: 2, 页码: 172-175
Authors:  刘志强;  王良臣;  于丽娟;  郭金霞;  伊晓燕;  王立彬;  陈宇;  马龙
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大功率倒装结构LED芯片热模拟及热分析 期刊论文
半导体光电, 2007, 卷号: 28, 期号: 6, 页码: 769-773
Authors:  王立彬;  陈宇;  刘志强;  伊晓燕;  马龙;  潘领峰;  王良臣
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功率型GaN基LED静电保护方法研究 期刊论文
半导体光电, 2007, 卷号: 28, 期号: 4, 页码: 474-477
Authors:  王立彬;  刘志强;  陈宇;  伊晓燕;  马龙;  潘领峰;  王良臣
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背孔结构氮化镓基发光二极管的制作方法 专利
专利类型: 发明, 申请日期: 2006-04-05, 公开日期: 2009-06-04, 2009-06-11
Inventors:  马龙;  王良臣;  王立彬;  郭金霞;  伊晓燕
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InP/Si键合界面热应力分析 期刊论文
半导体光电, 2006, 卷号: 27, 期号: 4, 页码: 429-433
Authors:  刘志强;  王良臣;  于丽娟;  郭金霞;  伊晓燕;  马龙;  王立彬;  陈宇
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